Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion [electronic resource] / - 1st ed. 2018. - XIII, 232 p. 183 illus., 165 illus. in color. | Binding - Card Paper | - Integrated Circuits and Systems, 1558-9412 . - Integrated Circuits and Systems, .

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

9783319779942


Electrical Engineering

Circuits and Systems. Electronic Circuits and Devices. Optical and Electronic Materials.

621.3815
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