Das, Supratim Subhra
Improvement of drive currents of FinFET using strained si technology - Vol.103(1), Feb - New York Springer 2022 - 101-105p.
In this paper, an analysis of Fin thickness variation on device performance of SiGe channel FinFET on SOI technology is reported. For a double gate n-channel FinFET with a gate length of 32 nm and Fin height of 60 nm, thickness of fin is varied from 6 to 14 nm. The transfer characteristics at different fin thickness are observed and compared by extracting electrical parameters like threshold voltage, transconductance, etc. A comparative study was also made between Si channel and SiGe channel FinFET characteristics. In 32 nm technology node, an improvement in drive current is observed with the increase of fin width in SiGe channel FinFET, but typical behavior is observed and analyzed in case of Si channel FinFET. All simulations have been performed using Sentaurus (TCAD device simulator) using suitable current model.
Humanities and Applied Sciences
Improvement of drive currents of FinFET using strained si technology - Vol.103(1), Feb - New York Springer 2022 - 101-105p.
In this paper, an analysis of Fin thickness variation on device performance of SiGe channel FinFET on SOI technology is reported. For a double gate n-channel FinFET with a gate length of 32 nm and Fin height of 60 nm, thickness of fin is varied from 6 to 14 nm. The transfer characteristics at different fin thickness are observed and compared by extracting electrical parameters like threshold voltage, transconductance, etc. A comparative study was also made between Si channel and SiGe channel FinFET characteristics. In 32 nm technology node, an improvement in drive current is observed with the increase of fin width in SiGe channel FinFET, but typical behavior is observed and analyzed in case of Si channel FinFET. All simulations have been performed using Sentaurus (TCAD device simulator) using suitable current model.
Humanities and Applied Sciences