| 000 -LEADER |
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| fixed length control field |
a |
| 003 - CONTROL NUMBER IDENTIFIER |
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| control field |
OSt |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
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| control field |
20200115125515.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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| fixed length control field |
200115b xxu||||| |||| 00| 0 eng d |
| 040 ## - CATALOGING SOURCE |
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| Original cataloging agency |
AIKTC-KRRC |
| Transcribing agency |
AIKTC-KRRC |
| 100 ## - MAIN ENTRY--PERSONAL NAME |
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| 9 (RLIN) |
11727 |
| Author |
Pour, G. Behzadi |
| 245 ## - TITLE STATEMENT |
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| Title |
Influence of oxide film surface morphology and thickness on the properties of gas sensitive nanostructure sensor |
| 250 ## - EDITION STATEMENT |
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| Volume, Issue number |
Vol.57(10), Oct |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. |
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| Place of publication, distribution, etc. |
New Delhi |
| Name of publisher, distributor, etc. |
CSIR |
| Year |
2019 |
| 300 ## - PHYSICAL DESCRIPTION |
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| Pagination |
743-749p. |
| 520 ## - SUMMARY, ETC. |
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| Summary, etc. |
In this study, the gas sensitive metal-oxide semiconductor (MOS) nanostructure sensors based on Ni thin film have been fabricated. The influences of SiO2film surface morphology and thickness on the response (R%) and electrical properties of the sensors have been investigated at 150 °C. The surface morphology of the SiO2film has been characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The C-V curves of the MOS nanostructure sensors in pure nitrogen and 2 % hydrogen have been reported as well. For the SiO2film thicknesses of 14, 65 and 74 nmthe measured flat-band voltages (VFB) are 0.7, 1.5 and 2 V, respectively. The responses of different sensors in 2% hydrogen for SiO2film thicknesses of 14 and 74 nm are 84% and 32%, respectively.The MOS nanostructure sensors exhibited good response to the hydrogen gas, with excellent sensitivity. The MOS nanostructure sensor based on Ni thin film and SiO2film thickness of 14 nm shows high response and sensitivity |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
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| 9 (RLIN) |
4642 |
| Topical term or geographic name entry element |
Humanities and Applied Science |
| 700 ## - ADDED ENTRY--PERSONAL NAME |
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| 9 (RLIN) |
11728 |
| Co-Author |
Aval, L. Fekri |
| 773 0# - HOST ITEM ENTRY |
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| Place, publisher, and date of publication |
New Delhi CSIR-NISCAIR |
| Title |
Indian journal of pure & applied physics (IJPAP) |
| International Standard Serial Number |
0019-5596 |
| 856 ## - ELECTRONIC LOCATION AND ACCESS |
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| URL |
http://nopr.niscair.res.in/bitstream/123456789/51111/1/IJPAP%2057%2810%29%20743-749.pdf |
| Link text |
Click here |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) |
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| Source of classification or shelving scheme |
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| Koha item type |
Articles Abstract Database |
