Influence of Cu concentration on the structural, morphological, optical and catalytic properties of TiO2thin films (Record no. 10945)

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control field 20200115145101.0
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fixed length control field 200115b xxu||||| |||| 00| 0 eng d
040 ## - CATALOGING SOURCE
Original cataloging agency AIKTC-KRRC
Transcribing agency AIKTC-KRRC
100 ## - MAIN ENTRY--PERSONAL NAME
9 (RLIN) 11740
Author Vidhya, R.
245 ## - TITLE STATEMENT
Title Influence of Cu concentration on the structural, morphological, optical and catalytic properties of TiO2thin films
250 ## - EDITION STATEMENT
Volume, Issue number Vol.57(7), July
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. New Delhi
Name of publisher, distributor, etc. CSIR
Year 2019
300 ## - PHYSICAL DESCRIPTION
Pagination 475-482p.
520 ## - SUMMARY, ETC.
Summary, etc. Pristine titanium oxide (TiO2)and Cu doped TiO2thin films of 2.0 μm thicknesses have been deposited on glass substrates by sol-gel dip coating technique. The deposited films are even and more adherent to the substrate. The consequences of incorporation of Cu ions of different concentration in TiO2lattice towards the structural, morphological and optical characteristics of prepared thin films have been investigated.Cu doping alters crystallite size and morphology of doped TiO2films marginally.Gradual increase in concentration of Cu atoms into TiO2matrix expands the absorption window of prepared films to visible region. The decrease in excitonic energy upon Cu doping promotes the charge separation in TiO2semiconductor. Depending upon Cu concentration,exciton life time is extended fairly which leads to improved electron-hole separation and enhanced oxidation-reduction reactions at the surface of TiO2semiconductors.The advantage of thin film catalyst over the other catalyst structures has been exhibited by the reusability nature of Cu-TiO2films.This study reveals that an ideal amount of Cu doping can increase the photocatalytic performance of TiO2thin films efficiently.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
9 (RLIN) 4642
Topical term or geographic name entry element Humanities and Applied Science
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9 (RLIN) 11741
Co-Author Gandhimathi, R.
773 0# - HOST ITEM ENTRY
International Standard Serial Number 0019-5596
Title Indian journal of pure & applied physics (IJPAP)
Place, publisher, and date of publication New Delhi CSIR-NISCAIR
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URL http://nopr.niscair.res.in/bitstream/123456789/49498/1/IJPAP%2057%287%29%20475-482.pdf
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          School of Engineering & Technology School of Engineering & Technology Archieval Section 2020-01-15 2020716 2020-01-15 2020-01-15 Articles Abstract Database
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