One step synthesis of Cu2ZnSnS4 nanoflakes by microwave irradiation technique and effect of Cu concentration (Record no. 10963)

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control field OSt
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20200116120948.0
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fixed length control field 200116b xxu||||| |||| 00| 0 eng d
040 ## - CATALOGING SOURCE
Original cataloging agency AIKTC-KRRC
Transcribing agency AIKTC-KRRC
100 ## - MAIN ENTRY--PERSONAL NAME
9 (RLIN) 11772
Author Kandare, S. P.
245 ## - TITLE STATEMENT
Title One step synthesis of Cu2ZnSnS4 nanoflakes by microwave irradiation technique and effect of Cu concentration
250 ## - EDITION STATEMENT
Volume, Issue number Vol.57(1), Jan
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. New Delhi
Name of publisher, distributor, etc. CSIR
Year 2019
300 ## - PHYSICAL DESCRIPTION
Pagination 7-13p.
520 ## - SUMMARY, ETC.
Summary, etc. The influence of cyclic microwave irradiation and effect of Cu concentration has been investigated for synthesis of pure phase Cu2ZnSnS4 powder. It has been observed that Cu concentration plays a vital role to get pure phase Cu2ZnSnS4. The optical properties, phase purity, crystallographic structure and morphology have been investigated by spectroscopic and microscopic techniques. The results reveal that single phase kesterite Cu2ZnSnS4 with no other secondary phase can be obtained by precisely controlling the cyclic microwave irradiation time and the precursor concentrations. The optical band gap of prepared Cu2ZnSnS4 powder, estimated from UV-Visible spectroscopy has been found to be ~ 1.45 eV which is superlative for photovoltaic application. Systematic Raman study confirms the formation of Cu2ZnSnS4 phase and suppression of CuS peak with proper control in copper concentration. TEM image shows nanoflakes kind of morphology having thickness of flakes between 25 nm to 45 nm. Further the crystal inter-planer spacing is found to be 0.32 nm, which is consistent with the XRD data and ascribed to (112) plane.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
9 (RLIN) 4642
Topical term or geographic name entry element Humanities and Applied Science
700 ## - ADDED ENTRY--PERSONAL NAME
9 (RLIN) 11773
Co-Author Thorat, A. B.
773 0# - HOST ITEM ENTRY
Title Indian journal of pure & applied physics (IJPAP)
Place, publisher, and date of publication New Delhi CSIR-NISCAIR
International Standard Serial Number 0019-5596
856 ## - ELECTRONIC LOCATION AND ACCESS
URL http://nopr.niscair.res.in/bitstream/123456789/45633/1/IJPAP%2057%281%29%207-13.pdf
Link text Click here
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          School of Engineering & Technology School of Engineering & Technology Archieval Section 2020-01-16 2020734 2020-01-16 2020-01-16 Articles Abstract Database
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