| 000 -LEADER |
|---|
| fixed length control field |
a |
| 003 - CONTROL NUMBER IDENTIFIER |
|---|
| control field |
OSt |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
|---|
| control field |
20221006092910.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
|---|
| fixed length control field |
221006b xxu||||| |||| 00| 0 eng d |
| 040 ## - CATALOGING SOURCE |
|---|
| Original cataloging agency |
AIKTC-KRRC |
| Transcribing agency |
AIKTC-KRRC |
| 100 ## - MAIN ENTRY--PERSONAL NAME |
|---|
| 9 (RLIN) |
18208 |
| Author |
Hamrouni, Sahbi |
| 245 ## - TITLE STATEMENT |
|---|
| Title |
Effectiveness of Ga percent on the electrical characteristics of Al/CuIn1-xGaxSe2/ITO schottky junctions |
| 250 ## - EDITION STATEMENT |
|---|
| Volume, Issue number |
Vol.60(7), Jul |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. |
|---|
| Place of publication, distribution, etc. |
New Delhi |
| Name of publisher, distributor, etc. |
CSIR |
| Year |
2022 |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Pagination |
582-589p. |
| 520 ## - SUMMARY, ETC. |
|---|
| Summary, etc. |
The electrodeposition method has been employed to deposit our quaternary semiconductor thin films CuIn1-xGaxSe2 (CIGS) which is deposited on Indium Tin Oxide (ITO) substrates with different Gallium ratios (x=0, 0.2, 0.4, 0.6, 0.8 and 1). The structural and optical characteristics variation of the films with altering Ga percent has been studied. The impact of changing the Ga/(In+Ga) atomic ratio on the electrical transport characteristics of electrodeposited CIGS thin films has been investigated using I-V and C-V measurements. All junctions have revealed the Schottky behavior. The energy gap of the studied compositions has increased with increasing Ga content. This lowered the values of charge mobility in the investigated films. Besides, the optimum Ga/(In+Ga) atomic proportion in the view of the obtained results is achieved by adding Ga with 20 %. Also, this finding approves the validation of our proposed criterion in expecting the most efficient photovoltaic junctions. The obtained results could improve our current knowledge of the quaternary photovoltaic solar cells. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| 9 (RLIN) |
4642 |
| Topical term or geographic name entry element |
Humanities and Applied Sciences |
| 700 ## - ADDED ENTRY--PERSONAL NAME |
|---|
| 9 (RLIN) |
18209 |
| Co-Author |
AlKhalifah, Manea |
| 773 0# - HOST ITEM ENTRY |
|---|
| Title |
Indian journal of pure & applied physics (IJPAP) |
| International Standard Serial Number |
0019-5596 |
| Place, publisher, and date of publication |
New Delhi CSIR-NISCAIR |
| 856 ## - ELECTRONIC LOCATION AND ACCESS |
|---|
| URL |
http://op.niscpr.res.in/index.php/IJPAP/article/view/61748 |
| Link text |
Click here |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) |
|---|
| Source of classification or shelving scheme |
|
| Koha item type |
Articles Abstract Database |
