Effect of RF power on physical and electrical properties of Al-doped ZnO hin film (Record no. 17833)

000 -LEADER
fixed length control field a
003 - CONTROL NUMBER IDENTIFIER
control field OSt
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20221021120303.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 221021b xxu||||| |||| 00| 0 eng d
040 ## - CATALOGING SOURCE
Original cataloging agency AIKTC-KRRC
Transcribing agency AIKTC-KRRC
100 ## - MAIN ENTRY--PERSONAL NAME
9 (RLIN) 18440
Author Rana, Vijay S.
245 ## - TITLE STATEMENT
Title Effect of RF power on physical and electrical properties of Al-doped ZnO hin film
250 ## - EDITION STATEMENT
Volume, Issue number Vol.60(3), Mar
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. New Delhi
Name of publisher, distributor, etc. CSIR
Year 2022
300 ## - PHYSICAL DESCRIPTION
Pagination 246-253p.
520 ## - SUMMARY, ETC.
Summary, etc. We deposited Al-doped zinc oxide (AZO) thin films on PTFE flexible substrate by RF sputtering with respect to the
power in the range 125-155 W. XRD-pattern showed the preferred c-axis (002) orientation regardless the rf-power, which
confirmed the hexagonal wurtzite crystal structure. The dislocation density (δ), and strain (ε) of AZO thin films were
determined to be 1.861015-0.7410 15 m-2, and 85.6×10 -3-54.0×10 -3, respectively. The AZO film deposited at 135 W showed
the smooth and uniform microstructure, which is the highest intensity of XRD-pattern due to smaller grain size. The
refractive index (n) increased from 2.24 to 2.34, while the bandgap (Eg), and urbach tail (Eu) decreased from 3.66 to 3.31 eV
and 0.33 to 0.22 eV as the RF power increased from 125 to 155 W. The sheet resistance and figure of merit (FOM) of AZO
thin films were observed to be the lowest 53.36 /cm and 5.17  10 -10 -1 for the sample 135 W.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
9 (RLIN) 4642
Topical term or geographic name entry element Humanities and Applied Sciences
700 ## - ADDED ENTRY--PERSONAL NAME
9 (RLIN) 18441
Co-Author Purohit, Laxmi P.
773 0# - HOST ITEM ENTRY
Place, publisher, and date of publication New Delhi CSIR-NISCAIR
Title Indian journal of pure & applied physics (IJPAP)
International Standard Serial Number 0019-5596
856 ## - ELECTRONIC LOCATION AND ACCESS
URL http://nopr.niscpr.res.in/bitstream/123456789/59493/1/IJPAP%2060%283%29%20246-253.pdf
Link text Click here
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          School of Engineering & Technology School of Engineering & Technology Archieval Section 2022-10-21 2022-1895 2022-10-21 2022-10-21 Articles Abstract Database
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