Effect of RF power on physical and electrical properties of Al-doped ZnO hin film (Record no. 17833)
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000 -LEADER | |
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fixed length control field | a |
003 - CONTROL NUMBER IDENTIFIER | |
control field | OSt |
005 - DATE AND TIME OF LATEST TRANSACTION | |
control field | 20221021120303.0 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
fixed length control field | 221021b xxu||||| |||| 00| 0 eng d |
040 ## - CATALOGING SOURCE | |
Original cataloging agency | AIKTC-KRRC |
Transcribing agency | AIKTC-KRRC |
100 ## - MAIN ENTRY--PERSONAL NAME | |
9 (RLIN) | 18440 |
Author | Rana, Vijay S. |
245 ## - TITLE STATEMENT | |
Title | Effect of RF power on physical and electrical properties of Al-doped ZnO hin film |
250 ## - EDITION STATEMENT | |
Volume, Issue number | Vol.60(3), Mar |
260 ## - PUBLICATION, DISTRIBUTION, ETC. | |
Place of publication, distribution, etc. | New Delhi |
Name of publisher, distributor, etc. | CSIR |
Year | 2022 |
300 ## - PHYSICAL DESCRIPTION | |
Pagination | 246-253p. |
520 ## - SUMMARY, ETC. | |
Summary, etc. | We deposited Al-doped zinc oxide (AZO) thin films on PTFE flexible substrate by RF sputtering with respect to the power in the range 125-155 W. XRD-pattern showed the preferred c-axis (002) orientation regardless the rf-power, which confirmed the hexagonal wurtzite crystal structure. The dislocation density (δ), and strain (ε) of AZO thin films were determined to be 1.861015-0.7410 15 m-2, and 85.6×10 -3-54.0×10 -3, respectively. The AZO film deposited at 135 W showed the smooth and uniform microstructure, which is the highest intensity of XRD-pattern due to smaller grain size. The refractive index (n) increased from 2.24 to 2.34, while the bandgap (Eg), and urbach tail (Eu) decreased from 3.66 to 3.31 eV and 0.33 to 0.22 eV as the RF power increased from 125 to 155 W. The sheet resistance and figure of merit (FOM) of AZO thin films were observed to be the lowest 53.36 /cm and 5.17 10 -10 -1 for the sample 135 W. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
9 (RLIN) | 4642 |
Topical term or geographic name entry element | Humanities and Applied Sciences |
700 ## - ADDED ENTRY--PERSONAL NAME | |
9 (RLIN) | 18441 |
Co-Author | Purohit, Laxmi P. |
773 0# - HOST ITEM ENTRY | |
Place, publisher, and date of publication | New Delhi CSIR-NISCAIR |
Title | Indian journal of pure & applied physics (IJPAP) |
International Standard Serial Number | 0019-5596 |
856 ## - ELECTRONIC LOCATION AND ACCESS | |
URL | http://nopr.niscpr.res.in/bitstream/123456789/59493/1/IJPAP%2060%283%29%20246-253.pdf |
Link text | Click here |
942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
Source of classification or shelving scheme | |
Koha item type | Articles Abstract Database |
Withdrawn status | Lost status | Source of classification or shelving scheme | Damaged status | Not for loan | Permanent Location | Current Location | Shelving location | Date acquired | Barcode | Date last seen | Price effective from | Koha item type |
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School of Engineering & Technology | School of Engineering & Technology | Archieval Section | 2022-10-21 | 2022-1895 | 2022-10-21 | 2022-10-21 | Articles Abstract Database |