Study of an n-MOSFET by designing at 100 nm and simulating using SILVACO ATLAS simulator (Record no. 18117)

000 -LEADER
fixed length control field a
003 - CONTROL NUMBER IDENTIFIER
control field OSt
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20221107101402.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 221107b xxu||||| |||| 00| 0 eng d
040 ## - CATALOGING SOURCE
Original cataloging agency AIKTC-KRRC
Transcribing agency AIKTC-KRRC
100 ## - MAIN ENTRY--PERSONAL NAME
9 (RLIN) 18921
Author Bhuyan, Muhibul Haque
245 ## - TITLE STATEMENT
Title Study of an n-MOSFET by designing at 100 nm and simulating using SILVACO ATLAS simulator
250 ## - EDITION STATEMENT
Volume, Issue number Vol.12(1), Jan-Feb
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. Haryana
Name of publisher, distributor, etc. IOSR - International Organization of Scientific Research
Year 2022
300 ## - PHYSICAL DESCRIPTION
Pagination 7-15p.
520 ## - SUMMARY, ETC.
Summary, etc. In this paper, the design steps of an n-MOSFET have been described and then the electrical characterization of
this MOSFET is simulated at 100 nm by using the SILVACO ATLAS software, which is a process and device
simulation software tool. The MOS device is virtually fabricated using ATHENA in SILVACO and simulations
have been performed with help of ATLAS software, and all graphs are plotted using TONYPLOT in the
SILVACO. The simulated results are then analyzed to study the n-MOSFET device’s mesh structure, transfer
and output characteristics of the same, doping and carrier concentration plot, etc. From the simulation study,
we found that the designed device is working well for various bias conditions.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
9 (RLIN) 4619
Topical term or geographic name entry element EXTC Engineering
700 ## - ADDED ENTRY--PERSONAL NAME
9 (RLIN) 18922
Co-Author Md. Tariqul Islam
773 0# - HOST ITEM ENTRY
Place, publisher, and date of publication Gurgaon International Organization Of Scientific Research (IOSR)
Title IOSR journal of VLSI and signal processing (IOSR-JVSP)
International Standard Serial Number 2319 – 4197
856 ## - ELECTRONIC LOCATION AND ACCESS
URL https://www.iosrjournals.org/iosr-jvlsi/papers/vol12-issue1/Ser-1/B12010715.pdf
Link text Click here
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme
Koha item type Articles Abstract Database
Holdings
Withdrawn status Lost status Source of classification or shelving scheme Damaged status Not for loan Permanent Location Current Location Shelving location Date acquired Barcode Date last seen Price effective from Koha item type
          School of Engineering & Technology School of Engineering & Technology Archieval Section 2022-11-07 2022-2022 2022-11-07 2022-11-07 Articles Abstract Database
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