Structural, dielectric and electrical properties of homovalent doped SrSn1-xTixO3 (0 ≤ x ≤ 0.08) System (Record no. 19164)

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fixed length control field a
003 - CONTROL NUMBER IDENTIFIER
control field OSt
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20230410090529.0
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fixed length control field 230410b xxu||||| |||| 00| 0 eng d
040 ## - CATALOGING SOURCE
Original cataloging agency AIKTC-KRRC
Transcribing agency AIKTC-KRRC
100 ## - MAIN ENTRY--PERSONAL NAME
9 (RLIN) 20459
Author Kumar, Aditya
245 ## - TITLE STATEMENT
Title Structural, dielectric and electrical properties of homovalent doped SrSn1-xTixO3 (0 ≤ x ≤ 0.08) System
250 ## - EDITION STATEMENT
Volume, Issue number Vol.60(11), Nov
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. New Delhi
Name of publisher, distributor, etc. CSIR
Year 2022
300 ## - PHYSICAL DESCRIPTION
Pagination 909-913p.
520 ## - SUMMARY, ETC.
Summary, etc. The samples SrSn1-xTixO3 with composition 0≤x≤0.08 have been prepared using sol-gel chemical route by sintering at 1173 K. All the samples are found to be single phase crystallized in orthorhombic structure. The dielectric properties indicate the existence of interfacial and orientation polarization in samples found to be stable up to 300 oC. Thermal dependence of electrical conductivity represents two conduction regions with activation energy (0.77-0.94) eV in region-1 and (0.19-0.27) eV in region-2 respectively. The plot of dc conductivity with hopping frequency results unit slope representing that the charge carriers remain same in both processes. DC conductivity of samples are found to be increased with Ti4+, due to reduction in polaron size. The present materials can be potentially used in thermally stable capacitor and mixed ionic and electronic conductors (MIECs) applications.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
9 (RLIN) 4642
Topical term or geographic name entry element Humanities and Applied Sciences
700 ## - ADDED ENTRY--PERSONAL NAME
9 (RLIN) 8420
Co-Author Singh, K.
773 0# - HOST ITEM ENTRY
Place, publisher, and date of publication New Delhi CSIR-NISCAIR
Title Indian journal of pure & applied physics (IJPAP)
International Standard Serial Number 0019-5596
856 ## - ELECTRONIC LOCATION AND ACCESS
URL http://op.niscair.res.in/index.php/IJPAP/article/view/65819
Link text Click here
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Source of classification or shelving scheme
Koha item type Articles Abstract Database
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Withdrawn status Lost status Source of classification or shelving scheme Damaged status Not for loan Permanent Location Current Location Shelving location Date acquired Barcode Date last seen Price effective from Koha item type
          School of Engineering & Technology School of Engineering & Technology Archieval Section 2023-04-10 2023-0646 2023-04-10 2023-04-10 Articles Abstract Database
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