000 -LEADER |
fixed length control field |
a |
003 - CONTROL NUMBER IDENTIFIER |
control field |
OSt |
005 - DATE AND TIME OF LATEST TRANSACTION |
control field |
20250312094303.0 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
fixed length control field |
250312b xxu||||| |||| 00| 0 eng d |
040 ## - CATALOGING SOURCE |
Original cataloging agency |
AIKTC-KRRC |
Transcribing agency |
AIKTC-KRRC |
100 ## - MAIN ENTRY--PERSONAL NAME |
9 (RLIN) |
25601 |
Author |
Dixit, Khushboo |
245 ## - TITLE STATEMENT |
Title |
Simulation study of various ETL layers to design the high performance pb-free perovskite (FASnI3) solar cell |
250 ## - EDITION STATEMENT |
Volume, Issue number |
Vol.62(11), Nov |
260 ## - PUBLICATION, DISTRIBUTION, ETC. |
Place of publication, distribution, etc. |
New Delhi |
Name of publisher, distributor, etc. |
NISCAIR |
Year |
2024 |
300 ## - PHYSICAL DESCRIPTION |
Pagination |
971-978p. |
520 ## - SUMMARY, ETC. |
Summary, etc. |
There are significant efforts being made to develop high-efficiency, lead-free perovskite solar cells (PSCs). In this study, Formamidinium tin iodide (FASnI3) has been used as an absorber layer to design a stable lead-free PSC. FASnI3 absorber has a wider band gap (1.41 eV) and is more temperature stable than lead-free Sn-based perovskite (CH3NH3SnI3). In this work, 1-D device simulation has been performed using SCAPS to get the optimum performance of the lead-free FASnI3-based PSCs. We have checked varieties of electron transport layers (ETL) such as WO3, TiO2, ZnO, PCBM, IGZO, ZnS, and WS2 to find the maximum power conversion efficiency (PCE) from the FASnI3 lead-free PSC. A detailed simulation study of the proposed solar cell architecture using SCAPS has been done to optimize the device structure and get the maximum power conversion efficiency. The proposed solar cell structure has shown an efficiency of 16% with a JSC of 27.02 mA, Voc of 0.925V, and FF of 63.98% which is the highest among the FASnI3 based lead-free solar cell structures to date. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
9 (RLIN) |
4642 |
Topical term or geographic name entry element |
Humanities and Applied Sciences |
700 ## - ADDED ENTRY--PERSONAL NAME |
9 (RLIN) |
25602 |
Co-Author |
Gufran Ahmad |
773 0# - HOST ITEM ENTRY |
International Standard Serial Number |
0019-5596 |
Title |
Indian journal of pure & applied physics (IJPAP) |
Place, publisher, and date of publication |
New Delhi CSIR-NISCAIR |
856 ## - ELECTRONIC LOCATION AND ACCESS |
URL |
https://or.niscpr.res.in/index.php/IJPAP/article/view/8697 |
Link text |
Click here |
942 ## - ADDED ENTRY ELEMENTS (KOHA) |
Source of classification or shelving scheme |
|
Koha item type |
Articles Abstract Database |