Simulation study of various ETL layers to design the high performance pb-free perovskite (FASnI3) solar cell (Record no. 22449)

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control field OSt
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20250312094303.0
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fixed length control field 250312b xxu||||| |||| 00| 0 eng d
040 ## - CATALOGING SOURCE
Original cataloging agency AIKTC-KRRC
Transcribing agency AIKTC-KRRC
100 ## - MAIN ENTRY--PERSONAL NAME
9 (RLIN) 25601
Author Dixit, Khushboo
245 ## - TITLE STATEMENT
Title Simulation study of various ETL layers to design the high performance pb-free perovskite (FASnI3) solar cell
250 ## - EDITION STATEMENT
Volume, Issue number Vol.62(11), Nov
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. New Delhi
Name of publisher, distributor, etc. NISCAIR
Year 2024
300 ## - PHYSICAL DESCRIPTION
Pagination 971-978p.
520 ## - SUMMARY, ETC.
Summary, etc. There are significant efforts being made to develop high-efficiency, lead-free perovskite solar cells (PSCs). In this study, Formamidinium tin iodide (FASnI3) has been used as an absorber layer to design a stable lead-free PSC. FASnI3 absorber has a wider band gap (1.41 eV) and is more temperature stable than lead-free Sn-based perovskite (CH3NH3SnI3). In this work, 1-D device simulation has been performed using SCAPS to get the optimum performance of the lead-free FASnI3-based PSCs. We have checked varieties of electron transport layers (ETL) such as WO3, TiO2, ZnO, PCBM, IGZO, ZnS, and WS2 to find the maximum power conversion efficiency (PCE) from the FASnI3 lead-free PSC. A detailed simulation study of the proposed solar cell architecture using SCAPS has been done to optimize the device structure and get the maximum power conversion efficiency. The proposed solar cell structure has shown an efficiency of 16% with a JSC of 27.02 mA, Voc of 0.925V, and FF of 63.98% which is the highest among the FASnI3 based lead-free solar cell structures to date.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
9 (RLIN) 4642
Topical term or geographic name entry element Humanities and Applied Sciences
700 ## - ADDED ENTRY--PERSONAL NAME
9 (RLIN) 25602
Co-Author Gufran Ahmad
773 0# - HOST ITEM ENTRY
International Standard Serial Number 0019-5596
Title Indian journal of pure & applied physics (IJPAP)
Place, publisher, and date of publication New Delhi CSIR-NISCAIR
856 ## - ELECTRONIC LOCATION AND ACCESS
URL https://or.niscpr.res.in/index.php/IJPAP/article/view/8697
Link text Click here
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme
Koha item type Articles Abstract Database
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          School of Engineering & Technology School of Engineering & Technology Archieval Section 2025-03-12 2025-0361 2025-03-12 2025-03-12 Articles Abstract Database
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