| 000 -LEADER |
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| fixed length control field |
a |
| 003 - CONTROL NUMBER IDENTIFIER |
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| control field |
OSt |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
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| control field |
20220721154819.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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190101b xxu||||| |||| 00| 0 eng d |
| 040 ## - CATALOGING SOURCE |
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| Original cataloging agency |
AIKTC-KRRC |
| Transcribing agency |
AIKTC-KRRC |
| 100 ## - MAIN ENTRY--PERSONAL NAME |
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| 9 (RLIN) |
7339 |
| Author |
Bogle, Kashinath A. |
| 245 ## - TITLE STATEMENT |
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| Title |
Optical and electrical properties of F doped SnO2 thin films |
| 250 ## - EDITION STATEMENT |
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| Volume, Issue number |
Vol. 56(10), October |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. |
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| Place of publication, distribution, etc. |
New Delhi |
| Year |
2018 |
| Name of publisher, distributor, etc. |
CSIR |
| 300 ## - PHYSICAL DESCRIPTION |
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| Pagination |
755-758 |
| 520 ## - SUMMARY, ETC. |
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| Summary, etc. |
A wide variety of commercial devices needs conducting/semiconducting metal oxide materials due to their unique combination of high optical transparency and high electrical conductivity. Moreover, induced defects within the host atomic arrangement are fairly responsible for their desirable optical and electrical properties. Therefore, studying the effect of doped ion is essential for better understanding of the behaviour of conducting/semiconducting metal oxides. In this context, influence of fluorine doping on optical and electrical properties of polycrystalline SnO2 thin films synthesized using sol-gel assisted spin coating method have been investigated in this work. The structural, optical and electronic analysis of pure and F doped SnO2 thin film indicates major effect of F doping concentration. Based on the electrical measurement these films show semiconducting nature with optical band gap in the range from 2.88 to 3.11 eV with increasing F concentration. These results suggest that F doped SnO2 thin films are suitable in field of advance electronic or nano-electronic device technology. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
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| 9 (RLIN) |
4642 |
| Topical term or geographic name entry element |
Humanities and Applied Sciences |
| 700 ## - ADDED ENTRY--PERSONAL NAME |
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| 9 (RLIN) |
7340 |
| Co-Author |
More, Kiran D. |
| 700 ## - ADDED ENTRY--PERSONAL NAME |
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| 9 (RLIN) |
7341 |
| Co-Author |
Begum, Sumayya |
| 773 0# - HOST ITEM ENTRY |
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| Place, publisher, and date of publication |
New Delhi CSIR-NISCAIR |
| International Standard Serial Number |
0019-5596 |
| Title |
Indian journal of pure & applied physics (IJPAP) |
| 856 ## - ELECTRONIC LOCATION AND ACCESS |
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| Link text |
Click here |
| URL |
http://nopr.niscair.res.in/handle/123456789/45249 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) |
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| Source of classification or shelving scheme |
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| Koha item type |
Articles Abstract Database |
