Review Paper To Design a Low Power CNTFET Based XOR Gate
By: Dabas, Veski
.
Contributor(s): Grewal, Surender Kumar.
Publisher: New Delhi STM Journals 2018Edition: Vol.(1), Jan-Apr.Description: 48-53p.Subject(s): EXTC EngineeringOnline resources: Click here
In:
Journal of VLSI design tools & technology (JoVDTT)Summary: The continuous scaling down of Silicon technology leads to various critical challenges and reliability issues such as short channel effect, high leakage current, interconnect problems, etc. CNTFET is the most probable substitutes to traditional MOSFET. The CNTFET device based circuits portray advantages with its better control over the device channel, reduced leakage current, reduced short channel effects. The CNTFET based XOR gate circuits incur the minimum power and energy dissipation. This paper presents a comparative analysis of XOR gate made of MOSFET and CNTFET on the basis of power consumption, delay, short channel effect and leakage current.
| Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
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School of Engineering & Technology Archieval Section | Not for loan | 2020487 |
The continuous scaling down of Silicon technology leads to various critical challenges and reliability issues such as short channel effect, high leakage current, interconnect problems, etc. CNTFET is the most probable substitutes to traditional MOSFET. The CNTFET device based circuits portray advantages with its better control over the device channel, reduced leakage current, reduced short channel effects. The CNTFET based XOR gate circuits incur the minimum power and energy dissipation. This paper presents a comparative analysis of XOR gate made of MOSFET and CNTFET on the basis of power consumption, delay, short channel effect and leakage current.
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