Short Review on the Electronic Properties of High Electron Mobility Transistors for the Applications in Digital Communication
By: Mukhopadhyay, Subhadeep
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Publisher: New Delhi Journals Pub 2018Edition: Vol.4(2), July-Dec.Description: 24-28p.Subject(s): EXTC EngineeringOnline resources: Click here
In:
International journal of digital communication and analog signalsSummary: In this review work, author has briefly reviewed on the relevant electronic properties to control the electrical properties of high electron mobility transistors (HEMTs). The electrical characteristics are reviewed corresponding to the microelectronic and Nanoelectronic HEMTs from the miniaturization point of view. Also, the effects of aluminium mole fraction, doping concentration and nano-layer thickness to control the drain current are reviewed. This work may be helpful to fabricate the electronic networks in digital communication using HEMTs.
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School of Engineering & Technology Archieval Section | Not for loan | 2020507 |
In this review work, author has briefly reviewed on the relevant electronic properties to control the electrical properties of high electron mobility transistors (HEMTs). The electrical characteristics are reviewed corresponding to the microelectronic and Nanoelectronic HEMTs from the miniaturization point of view. Also, the effects of aluminium mole fraction, doping concentration and nano-layer thickness to control the drain current are reviewed. This work may be helpful to fabricate the electronic networks in digital communication using HEMTs.
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