Effect of growth temperature and RF power on structural and optical properties of sputtered deposited PbS thin films
By: Gaur, Jyotshana
.
Contributor(s): Sharma, Hitesh Kumar.
Publisher: New Delhi CSIR 2019Edition: Vol.57(10), Oct.Description: 709-712p.Subject(s): Humanities and Applied ScienceOnline resources: Click here
In:
Indian journal of pure & applied physics (IJPAP)Summary: Lead sulphide (PbS) nanocrystalline thin films have been grown from sputtering with the variation of growth temperature and RF-Power. The intensity of single dominant peak (200) in XRD-pattern increases by increasing the growth temperature from 175 oC to 200 oC and RF power from 80 W to 100 W, respectively. The crystallite size and the strain of as-deposited PbS thin films have been calculated from XRD-peak profile analysis. Microscopic surface and cross-section images show the improvement in thin films growth in terms of alignment of grains and thickness. The band gap of PbS thin films has been determined from UV-Vis absorption spectra, where the band gap decreases from 1.98 eV to 1.72 eV as the growth temperature and power increased from 175 C and 80 W to 200 C and 100 W.
| Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
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Articles Abstract Database
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School of Engineering & Technology Archieval Section | Not for loan | 2020705 |
Lead sulphide (PbS) nanocrystalline thin films have been grown from sputtering with the variation of growth temperature and RF-Power. The intensity of single dominant peak (200) in XRD-pattern increases by increasing the growth temperature from 175 oC to 200 oC and RF power from 80 W to 100 W, respectively. The crystallite size and the strain of as-deposited PbS thin films have been calculated from XRD-peak profile analysis. Microscopic surface and cross-section images show the improvement in thin films growth in terms of alignment of grains and thickness. The band gap of PbS thin films has been determined from UV-Vis absorption spectra, where the band gap decreases from 1.98 eV to 1.72 eV as the growth temperature and power increased from 175 C and 80 W to 200 C and 100 W.
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