Dielectrically modulated AlGaN/InN/GaN nanoelectronic high electron mobility transistor based biosensor for protein detection
By: Kalita, Sanjib
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Contributor(s): Mallikarjuna, Kethepalli.
Publisher: New Delhi CSIR 2022Edition: Vol.60(2).Description: 150-156p.Subject(s): Humanities and Applied SciencesOnline resources: Click here
In:
Indian journal of pure & applied physics (IJPAP)Summary: In this work, a high electron mobility transistor (HEMT) based biosensor is designed to detect the virus-protein. Conduction band engineering of the biosensor is studied. DC and RF properties of the designed biosensor are studied. Sensitivity of the biosensor is studied corresponding to electric field, surface potential, drain current, transconductance, and current gain cut-off frequency. Sufficient sensitivity is obtained corresponding to each electrical parameter to detect the virus-protein. This work may be helpful to design and experimentally fabricate the HEMT based biosensor.
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School of Engineering & Technology Archieval Section | Not for loan | 2022-1875 |
In this work, a high electron mobility transistor (HEMT) based biosensor is designed to detect the virus-protein. Conduction band engineering of the biosensor is studied. DC and RF properties of the designed biosensor are studied. Sensitivity of the biosensor is studied corresponding to electric field, surface potential, drain current, transconductance, and current gain cut-off frequency. Sufficient sensitivity is obtained corresponding to each electrical parameter to detect the virus-protein. This work may be helpful to design and experimentally fabricate the HEMT based biosensor.
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