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On optimization of manufacturing of a current reference generator based on heterostructures to increase density of their elements: Influence of missmatch-induced stress and porosity of materials on technological process

By: Pankratov, E. L.
Publisher: Johannesburg AkiNik Publications 2022Edition: Vol.3(1), Jan-Jun.Description: 24-49p.Subject(s): Electrical EngineeringOnline resources: Click here In: International journal of advances in electrical engineeringSummary: In this paper we introduce an approach to increase density of field-effect transistors in the framework of a current reference generator. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch- induced stress.
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In this paper we introduce an approach to increase density of field-effect transistors in the framework
of a current reference generator. Framework the approach we consider manufacturing the inverter in
heterostructure with specific configuration. Several required areas of the heterostructure should be
doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed
framework optimized scheme. We also consider an approach to decrease value of mismatch-induced
stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat
transport in heterostructures during manufacturing of integrated circuits with account mismatch-
induced stress.

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