On control of manufacture of latched comparator to increase integration rate
By: Pankratov, E. L
.
Publisher: Johanesburg AkiNik Publications 2022Edition: Vol.3(1), Jan-Jun.Description: 50-70p.Subject(s): Electrical Engineering![](/opac-tmpl/bootstrap/images/filefind.png)
Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
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School of Engineering & Technology Archieval Section | Not for loan | 2022-2070 |
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In this paper we introduce an approach to increase integration rate of elements of a latched comparator.
Framework the approach we consider a heterostructure with special configuration. Several specific
areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant
and/or radiation defects should be optimized.
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