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On control of manufacture of latched comparator to increase integration rate

By: Pankratov, E. L.
Publisher: Johanesburg AkiNik Publications 2022Edition: Vol.3(1), Jan-Jun.Description: 50-70p.Subject(s): Electrical EngineeringOnline resources: Click here In: International journal of advances in electrical engineeringSummary: In this paper we introduce an approach to increase integration rate of elements of a latched comparator. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
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In this paper we introduce an approach to increase integration rate of elements of a latched comparator.
Framework the approach we consider a heterostructure with special configuration. Several specific
areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant
and/or radiation defects should be optimized.

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