Design features of Op-amp based on bipolar transistors for anti-aliasing active LPF with a low systematic component of zero offset voltage
By: Chumakov, V. E
.
Contributor(s): Serebryakov, A. I.
Publisher: Telangana IUP Publications 2022Edition: Vol.15(3), Jul.Description: 24-41p.Subject(s): Electrical EngineeringOnline resources: Click here
In:
IUP journal of electrical and electronics engineeringSummary: The zero offset voltage in anti-aliasing Low-Pass Filters (LPF) included in the Analog-to-
Digital Conversion (ADC) input has a significant effect on its effective bit rate. The paper
discusses methods for minimizing the systematic component of zero offset voltage (VOS)
of Operational Amplifiers (Op-Amp) in the structure of the LPF due to the degradation of
the current gain of the base (
) of bipolar transistors for an extremely common subclass
of Op-Amp with one high-impedance node. Methods for matching a high-impedance
Op-Amp node and a buffer amplifier with the help of Special Correcting Multipolars
(SCM) of p-(SCMp
) and n-types (SCMn ) are proposed. Methods of description and
formation of the given coefficients of weak current asymmetry of typical Op-Amp
functional units [Current Mirrors (CM), Input Differential Stage (IDS), Buffer Amplifiers
(BA), Reference Current Sources (SRC), etc.] are presented. The considered circuit
technique is also recommended for Op-Amp based on wide-band Heterojunction Bipolar
Transistor (HBT)-Junction Field Effect Transistor (JFET) technological processes that
implement field-effect (JFET) and Bipolar Junction Transistors (BJT) on a single chip,
especially when the influence of bipolar transistors on VOS needs to be compensated. As
an example, the results of computer simulation of GaAs Op-Amp with small VOS performed
on JFET field and p-n-p bipolar transistors are given.
| Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|
Articles Abstract Database
|
School of Engineering & Technology Archieval Section | Not for loan | 2023-0632 |
The zero offset voltage in anti-aliasing Low-Pass Filters (LPF) included in the Analog-to-
Digital Conversion (ADC) input has a significant effect on its effective bit rate. The paper
discusses methods for minimizing the systematic component of zero offset voltage (VOS)
of Operational Amplifiers (Op-Amp) in the structure of the LPF due to the degradation of
the current gain of the base (
) of bipolar transistors for an extremely common subclass
of Op-Amp with one high-impedance node. Methods for matching a high-impedance
Op-Amp node and a buffer amplifier with the help of Special Correcting Multipolars
(SCM) of p-(SCMp
) and n-types (SCMn ) are proposed. Methods of description and
formation of the given coefficients of weak current asymmetry of typical Op-Amp
functional units [Current Mirrors (CM), Input Differential Stage (IDS), Buffer Amplifiers
(BA), Reference Current Sources (SRC), etc.] are presented. The considered circuit
technique is also recommended for Op-Amp based on wide-band Heterojunction Bipolar
Transistor (HBT)-Junction Field Effect Transistor (JFET) technological processes that
implement field-effect (JFET) and Bipolar Junction Transistors (BJT) on a single chip,
especially when the influence of bipolar transistors on VOS needs to be compensated. As
an example, the results of computer simulation of GaAs Op-Amp with small VOS performed
on JFET field and p-n-p bipolar transistors are given.
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