AW-band metallic via-based inline microstrip-to-WR10 transition for mm-wave, satellite and RADAR applications
By: Varshney, Atul
.
Contributor(s): Sharma, Vipul.
Publisher: USA Springer 2023Edition: Vol.104(6), Dec.Description: 1241-1255p.Subject(s): Humanities and Applied SciencesOnline resources: Click here
In:
Journal of the institution of engineers (India): Series BSummary: In this article, an inline microstrip line-to-rectangular waveguide (MS-to-WR10) transition is designed using a metallic via and a multi-section ridge waveguide. The microstrip is intended on a low-loss RT Duroid 5880 substrate. A single-layer microstrip rectangular patch on the top side of the substrate used as an energy launcher in WR10 and a broadside wall beneath the substrate will serve as the ground for the RF energy launcher. The transition is novel as a single metallic via between the patch and the waveguide wall is used to combat surface waves from the substrate. The dimensional change in via height and diameter not only improves absolute bandwidth but also results in excellent insertion loss ≥ 0.30 dB and return loss ≤ 10 dB over 19.05% absolute bandwidth (88.14–94.81 GHz) of the entire W-Band range. The impedance matching and mode matching between the 50Ω microstrip quasi-TEM line and 490Ω TE10 WR10 to launch maximum RF energy in WR10 transition is achieved by a multi-section (four-stepped ridge waveguide) impedance transformer and a quarter-wave impedance transformer between the feed line and rectangular patch. The dispersion characteristics and five higher-order modes of the transition are also presented. The suggested transitions' results were validated by comparison of the results obtained HFSS using simulation software and electric LC (ELC) analogous circuits using ADS software. These are found analogous with few frequency shifts. The transition is most suitable for W-band front-end transmitter/receiver sections in mm-wave, satellite and RADAR applications. The transition is simple, compact and easy to fabricate.
| Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
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Articles Abstract Database
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School of Engineering & Technology Archieval Section | Not for loan | 2024-0298 |
In this article, an inline microstrip line-to-rectangular waveguide (MS-to-WR10) transition is designed using a metallic via and a multi-section ridge waveguide. The microstrip is intended on a low-loss RT Duroid 5880 substrate. A single-layer microstrip rectangular patch on the top side of the substrate used as an energy launcher in WR10 and a broadside wall beneath the substrate will serve as the ground for the RF energy launcher. The transition is novel as a single metallic via between the patch and the waveguide wall is used to combat surface waves from the substrate. The dimensional change in via height and diameter not only improves absolute bandwidth but also results in excellent insertion loss ≥ 0.30 dB and return loss ≤ 10 dB over 19.05% absolute bandwidth (88.14–94.81 GHz) of the entire W-Band range. The impedance matching and mode matching between the 50Ω microstrip quasi-TEM line and 490Ω TE10 WR10 to launch maximum RF energy in WR10 transition is achieved by a multi-section (four-stepped ridge waveguide) impedance transformer and a quarter-wave impedance transformer between the feed line and rectangular patch. The dispersion characteristics and five higher-order modes of the transition are also presented. The suggested transitions' results were validated by comparison of the results obtained HFSS using simulation software and electric LC (ELC) analogous circuits using ADS software. These are found analogous with few frequency shifts. The transition is most suitable for W-band front-end transmitter/receiver sections in mm-wave, satellite and RADAR applications. The transition is simple, compact and easy to fabricate.
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