Investigation and dependency analysis of silicon film thickness on performance of surrounding gate MOSFET at subthreshold regime
By: Sachdeva, Tarun Kumar
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Contributor(s): Agarwal, S. K.
Publisher: New Delhi STM Journals 2018Edition: Vol, 8(2), May-August.Description: 49-54.Subject(s): EXTC EngineeringOnline resources: Click here
In:
Journal of VLSI design tools & technology (JoVDTT)Summary: The characteristics of cylindrical gate all around MOSFET have been studied in terms of the dependence of various device performance metrics on silicon film thickness (Tsi). In this work, the effect of silicon film thickness on numerous performance metrics like threshold voltage (Vt), On current (Ion), subthreshold leakage current (Ioff), On-Off current ratio (Ion/Ioff) and DIBL of cylindrical GAA are comprehensively evaluated and analysed. It has been observed that cylindrical gate all around MOSFET offer high drive-current (Ion), low leakage current (Ioff), superior On-Off current ratio and hence enhanced gain. Thus, for ultra-low power applications surrounding nanowire contemplated as superior aspect. In the present study, all the device performances are investigated through ATLAS device simulator from Silvaco.
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School of Engineering & Technology Archieval Section | Not for loan | 2018147 |
The characteristics of cylindrical gate all around MOSFET have been studied in terms of the dependence of various device performance metrics on silicon film thickness (Tsi). In this work, the effect of silicon film thickness on numerous performance metrics like threshold voltage (Vt), On current (Ion), subthreshold leakage current (Ioff), On-Off current ratio (Ion/Ioff) and DIBL of cylindrical GAA are comprehensively evaluated and analysed. It has been observed that cylindrical gate all around MOSFET offer high drive-current (Ion), low leakage current (Ioff), superior On-Off current ratio and hence enhanced gain. Thus, for ultra-low power applications surrounding nanowire contemplated as superior aspect. In the present study, all the device performances are investigated through ATLAS device simulator from Silvaco.
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