Review on tunnel field effect transistor for ambipolar suppression, higher ON current and a lower subthreshold swing
By: Somani, Radhika M
.
Contributor(s): Upadhyay, H. R.
Publisher: New Delhi STM Journals 2018Edition: Vol, 8(2), May-August.Description: 55-66p.Subject(s): EXTC EngineeringOnline resources: Click here
In:
Journal of VLSI design tools & technology (JoVDTT)Summary: Modern IC technology force on the ICs design considering more area optimization and low power techniques. We study herein the effect of hetero gate dielectric materials on the OFF-current (IOFF) and ON-current (ION) of the heterogate (high-k/low-k) tunnel field-effect transistor for which the simulations give significant improvements as compared to single-gate devices using an SiO2 gate dielectric. The ambipolar behavior is suppressed and radio frequency (RF) parameters are enhanced by dielectric and gate material work function engineering.
| Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
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Articles Abstract Database
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School of Engineering & Technology Archieval Section | Not for loan | 2018148 |
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Modern IC technology force on the ICs design considering more area optimization and low power techniques. We study herein the effect of hetero gate dielectric materials on the OFF-current (IOFF) and ON-current (ION) of the heterogate (high-k/low-k) tunnel field-effect transistor for which the simulations give significant improvements as compared to single-gate devices using an SiO2 gate dielectric. The ambipolar behavior is suppressed and radio frequency (RF) parameters are enhanced by dielectric and gate material work function engineering.
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