Rana, Vijay S. <br/><br/>
Effect of RF power on physical and electrical properties of Al-doped ZnO hin film 

 - Vol.60(3), Mar 
 - New Delhi  CSIR  2022 
 - 246-253p. 
<br/><br/> We deposited Al-doped zinc oxide (AZO) thin films on PTFE flexible substrate by RF sputtering with respect to the<br/>power in the range 125-155 W. XRD-pattern showed the preferred c-axis (002) orientation regardless the rf-power, which<br/>confirmed the hexagonal wurtzite crystal structure. The dislocation density (δ), and strain (ε) of AZO thin films were<br/>determined to be 1.861015-0.7410 15 m-2, and 85.6×10 -3-54.0×10 -3, respectively. The AZO film deposited at 135 W showed<br/>the smooth and uniform microstructure, which is the highest intensity of XRD-pattern due to smaller grain size. The<br/>refractive index (n) increased from 2.24 to 2.34, while the bandgap (Eg), and urbach tail (Eu) decreased from 3.66 to 3.31 eV<br/>and 0.33 to 0.22 eV as the RF power increased from 125 to 155 W. The sheet resistance and figure of merit (FOM) of AZO<br/>thin films were observed to be the lowest 53.36 /cm and 5.17  10 -10 -1 for the sample 135 W. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Humanities and Applied Sciences