Bhuyan, Muhibul Haque  <br/><br/>
Study of an n-MOSFET by designing at 100 nm and simulating using SILVACO ATLAS simulator 

 - Vol.12(1), Jan-Feb 
 - Haryana  IOSR - International Organization of Scientific Research  2022 
 - 7-15p. 
<br/><br/> In this paper, the design steps of an n-MOSFET have been described and then the electrical characterization of<br/>this MOSFET is simulated at 100 nm by using the SILVACO ATLAS software, which is a process and device<br/>simulation software tool. The MOS device is virtually fabricated using ATHENA in SILVACO and simulations<br/>have been performed with help of ATLAS software, and all graphs are plotted using TONYPLOT in the<br/>SILVACO. The simulated results are then analyzed to study the n-MOSFET device’s mesh structure, transfer<br/>and output characteristics of the same, doping and carrier concentration plot, etc. From the simulation study,<br/>we found that the designed device is working well for various bias conditions. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>EXTC Engineering