Mukhopadhyay, Subhadeep <br/><br/>
Review on the Designs and Characteristics of High-Electron Mobility Transistors 

 - Vol.4(1), Jan-June 
 - New Delhi  Journals Pub  2018 
 - 20-41p. 
<br/><br/> Many authors have presented different physics based analytical models to manifest the characteristics of high electron mobility transistors (HEMTs). The designs of HEMTs are highly important to achieve sufficient efficiency. Conduction band engineering in HEMTs is the reason to generate a two-dimensional electron gas (2DEG) at the heterointerface. Microelectromechanical systems (MEMS) and microwave engineering are the relevant areas for the applications of HEMTs.<br/> 
<br/><br/><label>Subjects--Topical Terms: </label><br/>EXTC Engineering