Sun, Yabin.

Research on the Radiation Effects and Compact Model of SiGe HBT [electronic resource] / - 1st ed. 2018. - XXIV, 168 p. 171 illus. | Binding - Card Paper | - Springer Theses, Recognizing Outstanding Ph.D. Research, 2190-5053 . - Springer Theses, Recognizing Outstanding Ph.D. Research, .

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

9789811046124


EXTC Engineering

Electronics and Microelectronics, Instrumentation. Semiconductors, Solid State Physics. Optical and Electronic Materials. Electronic Circuits and Devices.

621.381