Somani, Radhika M. <br/><br/>
Review on tunnel field effect transistor for ambipolar suppression, higher ON current and a lower subthreshold swing 

 - Vol, 8(2), May-August 
 - New Delhi  STM Journals  2018 
 - 55-66p. 
<br/><br/> Modern IC technology force on the ICs design considering more area optimization and low power techniques. We study herein the effect of hetero gate dielectric materials on the OFF-current (IOFF) and ON-current (ION) of the heterogate (high-k/low-k) tunnel field-effect transistor for which the simulations give significant improvements as compared to single-gate devices using an SiO2 gate dielectric. The ambipolar behavior is suppressed and radio frequency (RF) parameters are enhanced by dielectric and gate material work function engineering. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>EXTC Engineering