000			a
999			_c10924 _d10924
003			OSt
005			20200115120519.0
008			200115b xxu||||| |||| 00| 0 eng d
040			_aAIKTC-KRRC _cAIKTC-KRRC
100			_911721 _aAl-Ghamdi, M. S.
245			_aSpectroscopic ellipsometry study of barrier width effect in self-organized InGaAs/GaAs QDs laser diodes
250			_aVol.57(10), Oct
260			_aNew Delhi _bCSIR _c2019
300			_a725-731p.
520			_aMolecular beam epitaxy (MBE) is used to grow InGaAs/GaAs quantum dots (QDs) laser diodes (LDs) with different barrier widths (5, 10 and 15 nm) at 580 ºC on GaAs substrates. Optical properties of the InGaAs/GaAs QDs LDshave been investigated by using the spectroscopic ellipsometry (SE) technique. A general oscillator optical model has been utilized to fit the experimental data in order to obtain the LD layer thicknesses, refractive index and absorption coefficient. The dielectric function, the energy band gap and the surface and volume energy loss functions are computed in the energy range 1-6 eV. The optical properties of the deposited InGaAs/GaAs QDs LDs are found to be affected by the barrier width, which give more insight into carriers dynamics and optical parameters in these devices. The refractive indices, the extinction coefficients and the dielectric constants of the LDs with barrier widths 15 and 10 nm are relatively larger than those of the LD with barrier width 5 nm. These indicate that optical properties of LDs with larger barrier widths (15 and 10 nm) will be improved. The interbandtransition energies in the three devices have calculated and identified. Two energy gaps at 1.04 and ~1.37 eV are obtained for all the heterostructures which indicates thatfabricated LDs may be operating for a wavelength of 1.23 m at room temperature.
650		0	_94642 _aHumanities and Applied Science
700			_911722 _aSayari, A.
773	0		_tIndian journal of pure & applied physics (IJPAP) _x0019-5596 _dNew Delhi CSIR-NISCAIR
856			_uhttp://nopr.niscair.res.in/bitstream/123456789/51114/1/IJPAP%2057%2810%29%20725-731.pdf _yClick here
942			_2ddc _cAR