000			a
999			_c10927 _d10927
003			OSt
005			20200115125515.0
008			200115b xxu||||| |||| 00| 0 eng d
040			_aAIKTC-KRRC _cAIKTC-KRRC
100			_911727 _aPour, G. Behzadi
245			_aInfluence of oxide film surface morphology and thickness on the properties of gas sensitive nanostructure sensor
250			_aVol.57(10), Oct
260			_aNew Delhi _bCSIR _c2019
300			_a743-749p.
520			_aIn this study, the gas sensitive metal-oxide semiconductor (MOS) nanostructure sensors based on Ni thin film have been fabricated. The influences of SiO2film surface morphology and thickness on the response (R%) and electrical properties of the sensors have been investigated at 150 °C. The surface morphology of the SiO2film has been characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The C-V curves of the MOS nanostructure sensors in pure nitrogen and 2 % hydrogen have been reported as well. For the SiO2film thicknesses of 14, 65 and 74 nmthe measured flat-band voltages (VFB) are 0.7, 1.5 and 2 V, respectively. The responses of different sensors in 2% hydrogen for SiO2film thicknesses of 14 and 74 nm are 84% and 32%, respectively.The MOS nanostructure sensors exhibited good response to the hydrogen gas, with excellent sensitivity. The MOS nanostructure sensor based on Ni thin film and SiO2film thickness of 14 nm shows high response and sensitivity
650		0	_94642 _aHumanities and Applied Science
700			_911728 _aAval, L. Fekri
773	0		_dNew Delhi CSIR-NISCAIR _tIndian journal of pure & applied physics (IJPAP) _x0019-5596
856			_uhttp://nopr.niscair.res.in/bitstream/123456789/51111/1/IJPAP%2057%2810%29%20743-749.pdf _yClick here
942			_2ddc _cAR