| 000 | 05135nam a22004935i 4500 | ||
|---|---|---|---|
| 999 |
_c13232 _d13232 |
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| 001 | 978-3-319-63154-7 | ||
| 003 | DE-He213 | ||
| 005 | 20211213094503.0 | ||
| 008 | 170927s2018 gw | s |||| 0|eng d | ||
| 020 | _a9783319631547 | ||
| 040 | _cAIKTC-KRRC | ||
| 041 | _aENG | ||
| 072 | 7 |
_aTJFC _2bicssc |
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| 072 | 7 |
_aTEC008010 _2bisacsh |
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| 072 | 7 |
_aTJFC _2thema |
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| 082 | 0 | 4 |
_a621.3815 _223 |
| 100 | 1 |
_aRudan, Massimo. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut |
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| 245 | 1 | 0 |
_aPhysics of Semiconductor Devices _h[electronic resource] / |
| 250 | _a2nd ed. 2018. | ||
| 264 | 1 |
_aCham : _bSpringer International Publishing : _bImprint: Springer, _c2018. |
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| 300 |
_aXLVIII, 920 p. 215 illus., 38 illus. in color. _bCard Paper |
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| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_aonline resource _bcr _2rdacarrier |
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| 347 |
_atext file _bPDF _2rda |
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| 520 | _aThis textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices. Provides a comprehensive textbook describing the physics of semiconductors, from fundamentals to applications; Proceeds from first principles to description of actual devices’ behavior; Written to be accessible, including mathematical derivations and explicit calculations, without being wordy; This new edition includes numerous new exercises and explanatory figures, as well as a variety of new material and improvements to the existing content. | ||
| 650 | 0 |
_aEXTC Engineering _94619 |
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| 653 | _aCircuits and Systems. | ||
| 653 | _aElectronic Circuits and Devices. | ||
| 653 | _aSemiconductors. | ||
| 710 | 2 | _aSpringerLink (Online service) | |
| 773 | 0 | _tSpringer Nature eBook | |
| 776 | 0 | 8 |
_iPrinted edition: _z9783319631530 |
| 776 | 0 | 8 |
_iPrinted edition: _z9783319631554 |
| 776 | 0 | 8 |
_iPrinted edition: _z9783319874869 |
| 856 | 4 | 0 |
_uhttps://doi.org/10.1007/978-3-319-63154-7 _zClick here to access eBook in Springer Nature platform. (Within Campus only.) |
| 942 |
_cEBOOKS _2ddc |
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