000			a
999			_c17830 _d17830
003			OSt
005			20221021104247.0
008			221021b xxu||||| |||| 00| 0 eng d
040			_aAIKTC-KRRC _cAIKTC-KRRC
100			_918435 _aGareso, Paulus Lobo
245			_aInfluence of thermal annealing to material properties of TiO2, ZnO, and TiO 2/ZnO bilayer films by Sol-Gel method
250			_aVol.60(3), Mar
260			_aNew Delhi _bCSIR _c2022
300			_a218-226p.
520			_aThis study reported on the material properties of TiO2, ZnO, and TiO2/ZnO bilayer thin films fabricated by sol-gel spin coating technique after annealing. ZnO thin films were prepared by dissolving zinc acetate dehydrated into a solvent of ethanol and diethanolamine (DEA) was later added. Meanwhile, for TiO2 films, titanium tetraisopropoxide (TTIP) was dissolved into ethanol and an acetate acid was added. Afterwards all film samples were annealed at different temperatures in the range of 400 – 600 oC for 60 minutes. For TiO2/ZnO bilayer thin films, the structural properties showed that after annealing at 600 oC, the X-RD peak intensity was more pronounced compared to at 400 and 500 o C. This indicated that the amorphous phase of the films decreased after annealing at 600 o C. Furthermore, the crystallite sizes of the films increase as the annealing temperature increased to 600 oC, while the strain reduces at this temperature. In the case of (UV-Vis) spectroscopy, it was seen that after annealing the transmittance value of the TiO2/ZnO bilayer increase. The band gap energy of the films consists of low and high energy. The low energy which is around 3.30 eV refers to the transitions of valence- conduction band in ZnO films and high energy was around 3.60 eV corresponding to the impurity transitions. In addition, the refractive index (n), the extinction coefficient (k), and the real and imaginary part of dielectric constant were determined from the transmittance and absorbance spectra results. Based on the SEM results indicate that there was no cluster in the surface of TiO2/ZnO bilayer thin films.
650		0	_94642 _aHumanities and Applied Sciences
700			_918436 _aJuarlin, Eko
773	0		_dNew Delhi CSIR-NISCAIR _x0019-5596 _tIndian journal of pure & applied physics (IJPAP)
856			_uhttp://nopr.niscpr.res.in/bitstream/123456789/59496/1/IJPAP%2060%283%29%20218-226.pdf _yClick here
942			_2ddc _cAR