| 000 | a | ||
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| 999 |
_c17833 _d17833 |
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| 003 | OSt | ||
| 005 | 20221021120303.0 | ||
| 008 | 221021b xxu||||| |||| 00| 0 eng d | ||
| 040 |
_aAIKTC-KRRC _cAIKTC-KRRC |
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| 100 |
_918440 _aRana, Vijay S. |
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| 245 | _aEffect of RF power on physical and electrical properties of Al-doped ZnO hin film | ||
| 250 | _aVol.60(3), Mar | ||
| 260 |
_aNew Delhi _bCSIR _c2022 |
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| 300 | _a246-253p. | ||
| 520 | _aWe deposited Al-doped zinc oxide (AZO) thin films on PTFE flexible substrate by RF sputtering with respect to the power in the range 125-155 W. XRD-pattern showed the preferred c-axis (002) orientation regardless the rf-power, which confirmed the hexagonal wurtzite crystal structure. The dislocation density (δ), and strain (ε) of AZO thin films were determined to be 1.861015-0.7410 15 m-2, and 85.6×10 -3-54.0×10 -3, respectively. The AZO film deposited at 135 W showed the smooth and uniform microstructure, which is the highest intensity of XRD-pattern due to smaller grain size. The refractive index (n) increased from 2.24 to 2.34, while the bandgap (Eg), and urbach tail (Eu) decreased from 3.66 to 3.31 eV and 0.33 to 0.22 eV as the RF power increased from 125 to 155 W. The sheet resistance and figure of merit (FOM) of AZO thin films were observed to be the lowest 53.36 /cm and 5.17 10 -10 -1 for the sample 135 W. | ||
| 650 | 0 |
_94642 _aHumanities and Applied Sciences |
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| 700 |
_918441 _aPurohit, Laxmi P. |
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| 773 | 0 |
_dNew Delhi CSIR-NISCAIR _tIndian journal of pure & applied physics (IJPAP) _x0019-5596 |
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| 856 |
_uhttp://nopr.niscpr.res.in/bitstream/123456789/59493/1/IJPAP%2060%283%29%20246-253.pdf _yClick here |
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| 942 |
_2ddc _cAR |
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