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040 _aAIKTC-KRRC
_cAIKTC-KRRC
100 _920459
_aKumar, Aditya
245 _aStructural, dielectric and electrical properties of homovalent doped SrSn1-xTixO3 (0 ≤ x ≤ 0.08) System
250 _aVol.60(11), Nov
260 _aNew Delhi
_bCSIR
_c2022
300 _a909-913p.
520 _aThe samples SrSn1-xTixO3 with composition 0≤x≤0.08 have been prepared using sol-gel chemical route by sintering at 1173 K. All the samples are found to be single phase crystallized in orthorhombic structure. The dielectric properties indicate the existence of interfacial and orientation polarization in samples found to be stable up to 300 oC. Thermal dependence of electrical conductivity represents two conduction regions with activation energy (0.77-0.94) eV in region-1 and (0.19-0.27) eV in region-2 respectively. The plot of dc conductivity with hopping frequency results unit slope representing that the charge carriers remain same in both processes. DC conductivity of samples are found to be increased with Ti4+, due to reduction in polaron size. The present materials can be potentially used in thermally stable capacitor and mixed ionic and electronic conductors (MIECs) applications.
650 0 _94642
_aHumanities and Applied Sciences
700 _98420
_aSingh, K.
773 0 _dNew Delhi CSIR-NISCAIR
_tIndian journal of pure & applied physics (IJPAP)
_x0019-5596
856 _uhttp://op.niscair.res.in/index.php/IJPAP/article/view/65819
_yClick here
942 _2ddc
_cAR