000			a
999			_c19164 _d19164
003			OSt
005			20230410090529.0
008			230410b xxu||||| |||| 00| 0 eng d
040			_aAIKTC-KRRC _cAIKTC-KRRC
100			_920459 _aKumar, Aditya
245			_aStructural, dielectric and electrical properties of homovalent doped SrSn1-xTixO3 (0 ≤ x ≤ 0.08) System
250			_aVol.60(11), Nov
260			_aNew Delhi _bCSIR _c2022
300			_a909-913p.
520			_aThe samples SrSn1-xTixO3 with composition 0≤x≤0.08 have been prepared using sol-gel chemical route by sintering at 1173 K. All the samples are found to be single phase crystallized in orthorhombic structure. The dielectric properties indicate the existence of interfacial and orientation polarization in samples found to be stable up to 300 oC. Thermal dependence of electrical conductivity represents two conduction regions with activation energy (0.77-0.94) eV in region-1 and (0.19-0.27) eV in region-2 respectively. The plot of dc conductivity with hopping frequency results unit slope representing that the charge carriers remain same in both processes. DC conductivity of samples are found to be increased with Ti4+, due to reduction in polaron size. The present materials can be potentially used in thermally stable capacitor and mixed ionic and electronic conductors (MIECs) applications.
650		0	_94642 _aHumanities and Applied Sciences
700			_98420 _aSingh, K.
773	0		_dNew Delhi CSIR-NISCAIR _tIndian journal of pure & applied physics (IJPAP) _x0019-5596
856			_uhttp://op.niscair.res.in/index.php/IJPAP/article/view/65819 _yClick here
942			_2ddc _cAR