000			a
999			_c20645 _d20645
003			OSt
005			20240203100104.0
008			240203b xxu||||| |||| 00| 0 eng d
040			_aAIKTC-KRRC _cAIKTC-KRRC
100			_922859 _aHota, Aditya Kumar
245			_aHigh-Q floating active inductor based VCO for L-band and lower C-band applications in 180 nm CMOS technology
250			_aVol.104(5), Oct
260			_aUSA _bSpringer _c2023
300			_a1023-1033p.
520			_aThis paper presents a low power, wide-tuned Inductor-capacitor (LC) voltage-controlled oscillator (VCO). A floating active inductor (FAI) with a high-quality factor (Q) is used in the VCO design. The FAI is designed with a cascode transistor pair and a cross-coupled transistor pair to achieve a high Q value of up to 3290. The inductance value of the FAI ranges from 12.5 nH to 256.2 nH. The VCO has 164.8% of oscillation frequency tuning, from 235 MHz to 2.83 GHz with a phase noise of −85.3 dBc/Hz to −102.4 dBc/Hz at 1 MHz offset frequency. The FAI and VCO have 17.1 × 18 µm2 and 58.6 × 64.6 µm2 silicon area respectively. The power consumption ranges from 6.8 mW to 8.62 mW within the frequency tuning range. The FAI and VCO are designed in UMC 0.18 µm mixed-mode CMOS technology.
650		0	_94642 _aHumanities and Applied Sciences
700			_922860 _aSethi, Kabiraj
773	0		_x2250-2106 _tJournal of the institution of engineers (India): Series B
856			_uhttps://link.springer.com/article/10.1007/s40031-023-00910-2 _yClick here
942			_2ddc _cAR