000			00427nam a2200157Ia 4500
999			_c6866 _d6866
005			20181105151004.0
008			181025s9999 xx 000 0 und d
020			_a978-81-775-8977-1
040			_aAIKTC-KRRC _cAIKTC-KRRC
041			_aENG
082			_a621.3815 _bPIE _2DDC23
100			_aPierret, Robert F.
245		0	_aSemiconductor device fundamentals
260			_aNoida _bPearson Education _c1996
300			_axxiii,792 p. _bPaperback
521			_aThe computer-based exercises and homework problems permit the replacement of plug-and-chug boredom with more challenging realistic problems Other special features include tables that summarize the required reading, difficulty level, and suggested weighting of end-of-chapter problems, "crib-sheet" ?like equation summaries in the critical beginning chapters, and direct reproductions of device data and computer-generated plots. PART I: SEMICONDUCTOR FUNDAMENTALS. Semiconductors -- A General Introduction. Carrier Modeling. Carrier Action. Basics of Device Fabrication. R1. Part I Supplement and Review. PART II: A. PN JUNCTION DIODES. PN Junction Electrostatics. PN Junction Diode -- I-V Characteristics. PN Junction Diode -- Small-Signal Admittance. PN Junction Diode -- Transient Response. Optoelectronic Diodes. PART III: BJTS AND OTHER JUNCTION DEVICES. BJT Fundamentals. BJT Static Characteristics. BJT Dynamic Response Modeling. PNPN Devices. MS Contacts and Schottky Diodes. R2. Part II Supplement and Review. PART IV: FIELD EFFECT DEVICES. Field Effect Introduction -- the J-FET and MESFET. MOS Fundamentals. MOSFETs -- The Essentials. Nonideal MOS. Modern FET Structures. R3. Part III Supplement and Review.
650			_94619 _aEXTC Engineering
942			_cBK _2ddc