Study of an n-MOSFET by designing at 100 nm and simulating using SILVACO ATLAS simulator (Record no. 18117)
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| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | OSt |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20221107101402.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 221107b xxu||||| |||| 00| 0 eng d |
| 040 ## - CATALOGING SOURCE | |
| Original cataloging agency | AIKTC-KRRC |
| Transcribing agency | AIKTC-KRRC |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| 9 (RLIN) | 18921 |
| Author | Bhuyan, Muhibul Haque |
| 245 ## - TITLE STATEMENT | |
| Title | Study of an n-MOSFET by designing at 100 nm and simulating using SILVACO ATLAS simulator |
| 250 ## - EDITION STATEMENT | |
| Volume, Issue number | Vol.12(1), Jan-Feb |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. | |
| Place of publication, distribution, etc. | Haryana |
| Name of publisher, distributor, etc. | IOSR - International Organization of Scientific Research |
| Year | 2022 |
| 300 ## - PHYSICAL DESCRIPTION | |
| Pagination | 7-15p. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc. | In this paper, the design steps of an n-MOSFET have been described and then the electrical characterization of<br/>this MOSFET is simulated at 100 nm by using the SILVACO ATLAS software, which is a process and device<br/>simulation software tool. The MOS device is virtually fabricated using ATHENA in SILVACO and simulations<br/>have been performed with help of ATLAS software, and all graphs are plotted using TONYPLOT in the<br/>SILVACO. The simulated results are then analyzed to study the n-MOSFET device’s mesh structure, transfer<br/>and output characteristics of the same, doping and carrier concentration plot, etc. From the simulation study,<br/>we found that the designed device is working well for various bias conditions. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| 9 (RLIN) | 4619 |
| Topical term or geographic name entry element | EXTC Engineering |
| 700 ## - ADDED ENTRY--PERSONAL NAME | |
| 9 (RLIN) | 18922 |
| Co-Author | Md. Tariqul Islam |
| 773 0# - HOST ITEM ENTRY | |
| Place, publisher, and date of publication | Gurgaon International Organization Of Scientific Research (IOSR) |
| Title | IOSR journal of VLSI and signal processing (IOSR-JVSP) |
| International Standard Serial Number | 2319 – 4197 |
| 856 ## - ELECTRONIC LOCATION AND ACCESS | |
| URL | https://www.iosrjournals.org/iosr-jvlsi/papers/vol12-issue1/Ser-1/B12010715.pdf |
| Link text | Click here |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Source of classification or shelving scheme | Dewey Decimal Classification |
| Koha item type | Articles Abstract Database |
| Withdrawn status | Lost status | Source of classification or shelving scheme | Damaged status | Not for loan | Home library | Current library | Shelving location | Date acquired | Total Checkouts | Barcode | Date last seen | Price effective from | Koha item type |
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| Dewey Decimal Classification | School of Engineering & Technology | School of Engineering & Technology | Archieval Section | 07/11/2022 | 2022-2022 | 07/11/2022 | 07/11/2022 | Articles Abstract Database |