Design features of Op-amp based on bipolar transistors for anti-aliasing active LPF with a low systematic component of zero offset voltage (Record no. 19148)

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fixed length control field a
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control field OSt
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20230406095338.0
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fixed length control field 230406b xxu||||| |||| 00| 0 eng d
040 ## - CATALOGING SOURCE
Original cataloging agency AIKTC-KRRC
Transcribing agency AIKTC-KRRC
100 ## - MAIN ENTRY--PERSONAL NAME
9 (RLIN) 20430
Author Chumakov, V. E.
245 ## - TITLE STATEMENT
Title Design features of Op-amp based on bipolar transistors for anti-aliasing active LPF with a low systematic component of zero offset voltage
250 ## - EDITION STATEMENT
Volume, Issue number Vol.15(3), Jul
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. Telangana
Name of publisher, distributor, etc. IUP Publications
Year 2022
300 ## - PHYSICAL DESCRIPTION
Pagination 24-41p.
520 ## - SUMMARY, ETC.
Summary, etc. The zero offset voltage in anti-aliasing Low-Pass Filters (LPF) included in the Analog-to-<br/>Digital Conversion (ADC) input has a significant effect on its effective bit rate. The paper<br/>discusses methods for minimizing the systematic component of zero offset voltage (VOS)<br/>of Operational Amplifiers (Op-Amp) in the structure of the LPF due to the degradation of<br/>the current gain of the base (<br/>) of bipolar transistors for an extremely common subclass<br/>of Op-Amp with one high-impedance node. Methods for matching a high-impedance<br/>Op-Amp node and a buffer amplifier with the help of Special Correcting Multipolars<br/>(SCM) of p-(SCMp<br/>) and n-types (SCMn ) are proposed. Methods of description and<br/>formation of the given coefficients of weak current asymmetry of typical Op-Amp<br/>functional units [Current Mirrors (CM), Input Differential Stage (IDS), Buffer Amplifiers<br/>(BA), Reference Current Sources (SRC), etc.] are presented. The considered circuit<br/>technique is also recommended for Op-Amp based on wide-band Heterojunction Bipolar<br/>Transistor (HBT)-Junction Field Effect Transistor (JFET) technological processes that<br/>implement field-effect (JFET) and Bipolar Junction Transistors (BJT) on a single chip,<br/>especially when the influence of bipolar transistors on VOS needs to be compensated. As<br/>an example, the results of computer simulation of GaAs Op-Amp with small VOS performed<br/>on JFET field and p-n-p bipolar transistors are given.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
9 (RLIN) 4623
Topical term or geographic name entry element Electrical Engineering
700 ## - ADDED ENTRY--PERSONAL NAME
9 (RLIN) 20431
Co-Author Serebryakov, A. I.
773 0# - HOST ITEM ENTRY
Place, publisher, and date of publication Hyderabad IUP Publications
Title IUP journal of electrical and electronics engineering
International Standard Serial Number 0974-1704
856 ## - ELECTRONIC LOCATION AND ACCESS
URL https://www.proquest.com/openview/c6947a9dc00a467336068f122b44458e/1?pq-origsite=gscholar&cbl=2029992
Link text Click here
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    Dewey Decimal Classification     School of Engineering & Technology School of Engineering & Technology Archieval Section 06/04/2023   2023-0632 06/04/2023 06/04/2023 Articles Abstract Database
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