Design features of Op-amp based on bipolar transistors for anti-aliasing active LPF with a low systematic component of zero offset voltage (Record no. 19148)
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| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | OSt |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20230406095338.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 230406b xxu||||| |||| 00| 0 eng d |
| 040 ## - CATALOGING SOURCE | |
| Original cataloging agency | AIKTC-KRRC |
| Transcribing agency | AIKTC-KRRC |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| 9 (RLIN) | 20430 |
| Author | Chumakov, V. E. |
| 245 ## - TITLE STATEMENT | |
| Title | Design features of Op-amp based on bipolar transistors for anti-aliasing active LPF with a low systematic component of zero offset voltage |
| 250 ## - EDITION STATEMENT | |
| Volume, Issue number | Vol.15(3), Jul |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. | |
| Place of publication, distribution, etc. | Telangana |
| Name of publisher, distributor, etc. | IUP Publications |
| Year | 2022 |
| 300 ## - PHYSICAL DESCRIPTION | |
| Pagination | 24-41p. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc. | The zero offset voltage in anti-aliasing Low-Pass Filters (LPF) included in the Analog-to-<br/>Digital Conversion (ADC) input has a significant effect on its effective bit rate. The paper<br/>discusses methods for minimizing the systematic component of zero offset voltage (VOS)<br/>of Operational Amplifiers (Op-Amp) in the structure of the LPF due to the degradation of<br/>the current gain of the base (<br/>) of bipolar transistors for an extremely common subclass<br/>of Op-Amp with one high-impedance node. Methods for matching a high-impedance<br/>Op-Amp node and a buffer amplifier with the help of Special Correcting Multipolars<br/>(SCM) of p-(SCMp<br/>) and n-types (SCMn ) are proposed. Methods of description and<br/>formation of the given coefficients of weak current asymmetry of typical Op-Amp<br/>functional units [Current Mirrors (CM), Input Differential Stage (IDS), Buffer Amplifiers<br/>(BA), Reference Current Sources (SRC), etc.] are presented. The considered circuit<br/>technique is also recommended for Op-Amp based on wide-band Heterojunction Bipolar<br/>Transistor (HBT)-Junction Field Effect Transistor (JFET) technological processes that<br/>implement field-effect (JFET) and Bipolar Junction Transistors (BJT) on a single chip,<br/>especially when the influence of bipolar transistors on VOS needs to be compensated. As<br/>an example, the results of computer simulation of GaAs Op-Amp with small VOS performed<br/>on JFET field and p-n-p bipolar transistors are given. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| 9 (RLIN) | 4623 |
| Topical term or geographic name entry element | Electrical Engineering |
| 700 ## - ADDED ENTRY--PERSONAL NAME | |
| 9 (RLIN) | 20431 |
| Co-Author | Serebryakov, A. I. |
| 773 0# - HOST ITEM ENTRY | |
| Place, publisher, and date of publication | Hyderabad IUP Publications |
| Title | IUP journal of electrical and electronics engineering |
| International Standard Serial Number | 0974-1704 |
| 856 ## - ELECTRONIC LOCATION AND ACCESS | |
| URL | https://www.proquest.com/openview/c6947a9dc00a467336068f122b44458e/1?pq-origsite=gscholar&cbl=2029992 |
| Link text | Click here |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Source of classification or shelving scheme | Dewey Decimal Classification |
| Koha item type | Articles Abstract Database |
| Withdrawn status | Lost status | Source of classification or shelving scheme | Damaged status | Not for loan | Home library | Current library | Shelving location | Date acquired | Total Checkouts | Barcode | Date last seen | Price effective from | Koha item type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Dewey Decimal Classification | School of Engineering & Technology | School of Engineering & Technology | Archieval Section | 06/04/2023 | 2023-0632 | 06/04/2023 | 06/04/2023 | Articles Abstract Database |