Simple method to estimate the loading effects of Al/Si on the characteristic impedance of multilayer microstrip line (Record no. 8514)

MARC details
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fixed length control field a
003 - CONTROL NUMBER IDENTIFIER
control field OSt
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220721154829.0
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fixed length control field 190313b xxu||||| |||| 00| 0 eng d
040 ## - CATALOGING SOURCE
Original cataloging agency AIKTC-KRRC
Transcribing agency AIKTC-KRRC
100 ## - MAIN ENTRY--PERSONAL NAME
9 (RLIN) 8029
Author Patel, Sandhya M
245 ## - TITLE STATEMENT
Title Simple method to estimate the loading effects of Al/Si on the characteristic impedance of multilayer microstrip line
250 ## - EDITION STATEMENT
Volume, Issue number Vol. 56(12), December
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. New Delhi
Name of publisher, distributor, etc. NISCAIR
Year 2018
300 ## - PHYSICAL DESCRIPTION
Pagination 959-964
520 ## - SUMMARY, ETC.
Summary, etc. The present study aims to experimentally determine the microwave transmission and reflection properties of aluminum thin film grown on silicon using sputtering. A simple microstrip line based structure has been used for the microwave characterization in the frequency range 10 MHz to 26.5 GHz. Complex S-parameter measurements reveal only small differences on silicon loading and aluminum/silicon loading in comparison to the microstrip line. The characteristic impedance (Z) of the microstrip line loaded with silicon and with aluminum/silicon have been obtained corresponding to the length of the loadings using two port microwave analysis. Comparison of loaded microstrip line with no loading shows large changes in the real part well as imaginary part of the characteristic impedance in the frequency range less than 10 GHz. Percentage changes in the real (Z) and imaginary (Z) have been found as ± 40% and ± 10% in average, respectively, for silicon loading in comparison to the no loading case, whereas these changes have been found to be below ±5% for aluminium/silicon loading, thus these smaller changes suggest the similar responses for aluminium/silicon loading and no loading. The results reveal that the propagation can be restored with the application of aluminum with any semiconductor or dielectric as loading on the microstrip line, which shows its potential to be explored for making an individual microwave component
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
9 (RLIN) 4642
Topical term or geographic name entry element Humanities and Applied Sciences
700 ## - ADDED ENTRY--PERSONAL NAME
9 (RLIN) 8030
Co-Author Kalra, Yogita
700 ## - ADDED ENTRY--PERSONAL NAME
9 (RLIN) 8031
Co-Author Ojha, V N
773 0# - HOST ITEM ENTRY
Title Indian journal of pure & applied physics (IJPAP)
International Standard Serial Number 0019-5596
Place, publisher, and date of publication New Delhi CSIR-NISCAIR
856 ## - ELECTRONIC LOCATION AND ACCESS
URL http://nopr.niscair.res.in/handle/123456789/45465
Link text Click here
942 ## - ADDED ENTRY ELEMENTS (KOHA)
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    Dewey Decimal Classification     School of Engineering & Technology School of Engineering & Technology Archieval Section 29/03/2019   2018182 10/06/2019 29/03/2019 Articles Abstract Database
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