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Low-Power CMOS Digital Pixel Imagers for High-Speed Uncooled PbSe IR Applications [electronic resource] /

By: Contributor(s): Language: ENG Series: Springer Theses, Recognizing Outstanding Ph.D. ResearchPublisher: Cham : Springer International Publishing : Imprint: Springer, 2017Edition: 1st ed. 2017Description: XXI, 173 p. 105 illus., 4 illus. in color. | Binding - Card Paper |Content type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9783319499628
Subject(s): Additional physical formats: Printed edition:: No title; Printed edition:: No title; Printed edition:: No titleDDC classification:
  • 621.381 23
Online resources: In: Springer Nature eBookSummary: This book describes the development of a new low-cost medium wavelength IR (MWIR) monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapor phase deposition (VPD) PbSe-based MWIR detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. In order to fulfill the operational requirements of VPD PbSe, this work proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation.
List(s) this item appears in: Springer Nature eBooks
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This book describes the development of a new low-cost medium wavelength IR (MWIR) monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapor phase deposition (VPD) PbSe-based MWIR detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. In order to fulfill the operational requirements of VPD PbSe, this work proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation.

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