Research on the Radiation Effects and Compact Model of SiGe HBT [electronic resource] /

By:

Sun, Yabin [author.]

Contributor(s):

SpringerLink (Online service)

Language: ENG Series: Springer Theses, Recognizing Outstanding Ph.D. ResearchPublisher: Singapore : Springer Singapore : Imprint: Springer, 2018Edition: 1st ed. 2018Description: XXIV, 168 p. 171 illus. | Binding - Card Paper |Content type:

text

Media type:

computer

Carrier type:

online resource

ISBN:

9789811046124

Subject(s):

Additional physical formats: Printed edition:: No title; Printed edition:: No title; Printed edition:: No titleDDC classification:

621.381 23

Online resources:

Click here to access eBook in Springer Nature platform. (Within Campus only.)

In: Springer Nature eBookSummary: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

List(s) this item appears in: Springer Nature eBooks

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This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

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