TY  - BOOK
AU  - Lutz,Josef
AU  - Schlangenotto,Heinrich
AU  - Scheuermann,Uwe
AU  - De Doncker,Rik
ED  - SpringerLink (Online service)
TI  - Semiconductor Power Devices: Physics, Characteristics, Reliability 
SN  - 9783319709178
U1  - 621.3815 23
PY  - 2018///
CY  - Cham
PB  - Springer International Publishing, Imprint: Springer
KW  - EXTC Engineering
KW  - Power Electronics, Electrical Machines and Networks
KW  - Energy Systems
KW  - Electronics and Microelectronics, Instrumentation
N2  - This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition
UR  - https://doi.org/10.1007/978-3-319-70917-8
ER  -