000			a
999			_c18117 _d18117
003			OSt
005			20221107101402.0
008			221107b xxu||||| |||| 00| 0 eng d
040			_aAIKTC-KRRC _cAIKTC-KRRC
100			_918921 _aBhuyan, Muhibul Haque
245			_aStudy of an n-MOSFET by designing at 100 nm and simulating using SILVACO ATLAS simulator
250			_aVol.12(1), Jan-Feb
260			_aHaryana _bIOSR - International Organization of Scientific Research _c2022
300			_a7-15p.
520			_aIn this paper, the design steps of an n-MOSFET have been described and then the electrical characterization of this MOSFET is simulated at 100 nm by using the SILVACO ATLAS software, which is a process and device simulation software tool. The MOS device is virtually fabricated using ATHENA in SILVACO and simulations have been performed with help of ATLAS software, and all graphs are plotted using TONYPLOT in the SILVACO. The simulated results are then analyzed to study the n-MOSFET device’s mesh structure, transfer and output characteristics of the same, doping and carrier concentration plot, etc. From the simulation study, we found that the designed device is working well for various bias conditions.
650		0	_94619 _aEXTC Engineering
700			_918922 _aMd. Tariqul Islam
773	0		_dGurgaon International Organization Of Scientific Research (IOSR) _tIOSR journal of VLSI and signal processing (IOSR-JVSP) _x2319 – 4197
856			_uhttps://www.iosrjournals.org/iosr-jvlsi/papers/vol12-issue1/Ser-1/B12010715.pdf _yClick here
942			_2ddc _cAR