| 000 -LEADER |
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| fixed length control field |
a |
| 003 - CONTROL NUMBER IDENTIFIER |
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| control field |
OSt |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
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| control field |
20191216121314.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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| fixed length control field |
191216b xxu||||| |||| 00| 0 eng d |
| 040 ## - CATALOGING SOURCE |
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| Original cataloging agency |
AIKTC-KRRC |
| Transcribing agency |
AIKTC-KRRC |
| 100 ## - MAIN ENTRY--PERSONAL NAME |
|---|
| 9 (RLIN) |
11206 |
| Author |
Mamta |
| 245 ## - TITLE STATEMENT |
|---|
| Title |
Review Paper: Low Power SRAM Cell using FinFET Technology |
| 250 ## - EDITION STATEMENT |
|---|
| Volume, Issue number |
Vol.8(1), Jan-Apr |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. |
|---|
| Place of publication, distribution, etc. |
New Delhi |
| Name of publisher, distributor, etc. |
STM Journals |
| Year |
2018 |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Pagination |
43-47p. |
| 520 ## - SUMMARY, ETC. |
|---|
| Summary, etc. |
To make portable battery operated devices more efficient with low leakage current has become a major challenge with the technology scaling. As the technology is scaling, the bulk MOSFET faces various challenges which lead to increased leakage current. FinFET is the most encouraging substitute to bulk CMOS, because of the reduced short channel effect. The FinFET device based circuits portrays advantages with its better control over the device channel and reduced short channel effects, resulting in reduced leakage power. The FinFET based SRAM cell incurs the minimum power and energy dissipation. This paper presents a comparative analysis of SRAM cell between MOSFET and FinFET on the basis of leakage power, short channel effect and power consumption. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| 9 (RLIN) |
4619 |
| Topical term or geographic name entry element |
EXTC Engineering |
| 700 ## - ADDED ENTRY--PERSONAL NAME |
|---|
| 9 (RLIN) |
11207 |
| Co-Author |
Grewal, Surender Kumar |
| 773 0# - HOST ITEM ENTRY |
|---|
| International Standard Serial Number |
2321–6492 |
| Title |
Journal of VLSI design tools & technology (JoVDTT) |
| Place, publisher, and date of publication |
Noida STM Journals |
| 856 ## - ELECTRONIC LOCATION AND ACCESS |
|---|
| URL |
http://engineeringjournals.stmjournals.in/index.php/JoVDTT/article/view/497 |
| Link text |
Click here |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) |
|---|
| Source of classification or shelving scheme |
|
| Koha item type |
Articles Abstract Database |
