Influence of thermal annealing to material properties of TiO2, ZnO, and TiO 2/ZnO bilayer films by Sol-Gel method (Record no. 17830)
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| 000 -LEADER | |
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| fixed length control field | a |
| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | OSt |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20221021104247.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 221021b xxu||||| |||| 00| 0 eng d |
| 040 ## - CATALOGING SOURCE | |
| Original cataloging agency | AIKTC-KRRC |
| Transcribing agency | AIKTC-KRRC |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| 9 (RLIN) | 18435 |
| Author | Gareso, Paulus Lobo |
| 245 ## - TITLE STATEMENT | |
| Title | Influence of thermal annealing to material properties of TiO2, ZnO, and TiO 2/ZnO bilayer films by Sol-Gel method |
| 250 ## - EDITION STATEMENT | |
| Volume, Issue number | Vol.60(3), Mar |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. | |
| Place of publication, distribution, etc. | New Delhi |
| Name of publisher, distributor, etc. | CSIR |
| Year | 2022 |
| 300 ## - PHYSICAL DESCRIPTION | |
| Pagination | 218-226p. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc. | This study reported on the material properties of TiO2, ZnO, and TiO2/ZnO bilayer thin films fabricated by sol-gel spin coating technique after annealing. ZnO thin films were prepared by dissolving zinc acetate dehydrated into a solvent of ethanol and diethanolamine (DEA) was later added. Meanwhile, for TiO2 films, titanium tetraisopropoxide (TTIP) was dissolved into ethanol and an acetate acid was added. Afterwards all film samples were annealed at different temperatures in the range of 400 – 600 oC for 60 minutes. For TiO2/ZnO bilayer thin films, the structural properties showed that after annealing at 600 oC, the X-RD peak intensity was more pronounced compared to at 400 and 500 o C. This indicated that the amorphous phase of the films decreased after annealing at 600 o C. Furthermore, the crystallite sizes of the films increase as the annealing temperature increased to 600 oC, while the strain reduces at this temperature. In the case of (UV-Vis) spectroscopy, it was seen that after annealing the transmittance value of the TiO2/ZnO bilayer increase. The band gap energy of the films consists of low and high energy. The low energy which is around 3.30 eV refers to the transitions of valence- conduction band in ZnO films and high energy was around 3.60 eV corresponding to the impurity transitions. In addition, the refractive index (n), the extinction coefficient (k), and the real and imaginary part of dielectric constant were determined from the transmittance and absorbance spectra results. Based on the SEM results indicate that there was no cluster in the surface of TiO2/ZnO bilayer thin films. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| 9 (RLIN) | 4642 |
| Topical term or geographic name entry element | Humanities and Applied Sciences |
| 700 ## - ADDED ENTRY--PERSONAL NAME | |
| 9 (RLIN) | 18436 |
| Co-Author | Juarlin, Eko |
| 773 0# - HOST ITEM ENTRY | |
| Place, publisher, and date of publication | New Delhi CSIR-NISCAIR |
| International Standard Serial Number | 0019-5596 |
| Title | Indian journal of pure & applied physics (IJPAP) |
| 856 ## - ELECTRONIC LOCATION AND ACCESS | |
| URL | http://nopr.niscpr.res.in/bitstream/123456789/59496/1/IJPAP%2060%283%29%20218-226.pdf |
| Link text | Click here |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Source of classification or shelving scheme | |
| Koha item type | Articles Abstract Database |
| Withdrawn status | Lost status | Source of classification or shelving scheme | Damaged status | Not for loan | Permanent Location | Current Location | Shelving location | Date acquired | Barcode | Date last seen | Price effective from | Koha item type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| School of Engineering & Technology | School of Engineering & Technology | Archieval Section | 2022-10-21 | 2022-1892 | 2022-10-21 | 2022-10-21 | Articles Abstract Database |