Influence of thermal annealing to material properties of TiO2, ZnO, and TiO 2/ZnO bilayer films by Sol-Gel method
By: Gareso, Paulus Lobo
.
Contributor(s): Juarlin, Eko.
Publisher: New Delhi CSIR 2022Edition: Vol.60(3), Mar.Description: 218-226p.Subject(s): Humanities and Applied SciencesOnline resources: Click here
In:
Indian journal of pure & applied physics (IJPAP)Summary: This study reported on the material properties of TiO2, ZnO, and TiO2/ZnO bilayer thin films fabricated by sol-gel spin
coating technique after annealing. ZnO thin films were prepared by dissolving zinc acetate dehydrated into a solvent of
ethanol and diethanolamine (DEA) was later added. Meanwhile, for TiO2 films, titanium tetraisopropoxide (TTIP) was
dissolved into ethanol and an acetate acid was added. Afterwards all film samples were annealed at different temperatures in
the range of 400 – 600 oC for 60 minutes. For TiO2/ZnO bilayer thin films, the structural properties showed that after
annealing at 600 oC, the X-RD peak intensity was more pronounced compared to at 400 and 500 o
C. This indicated that the
amorphous phase of the films decreased after annealing at 600 o
C. Furthermore, the crystallite sizes of the films increase as
the annealing temperature increased to 600 oC, while the strain reduces at this temperature. In the case of (UV-Vis)
spectroscopy, it was seen that after annealing the transmittance value of the TiO2/ZnO bilayer increase. The band gap energy
of the films consists of low and high energy. The low energy which is around 3.30 eV refers to the transitions of valence-
conduction band in ZnO films and high energy was around 3.60 eV corresponding to the impurity transitions. In addition,
the refractive index (n), the extinction coefficient (k), and the real and imaginary part of dielectric constant were determined
from the transmittance and absorbance spectra results. Based on the SEM results indicate that there was no cluster in the
surface of TiO2/ZnO bilayer thin films.
| Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|
Articles Abstract Database
|
School of Engineering & Technology Archieval Section | Not for loan | 2022-1892 |
This study reported on the material properties of TiO2, ZnO, and TiO2/ZnO bilayer thin films fabricated by sol-gel spin
coating technique after annealing. ZnO thin films were prepared by dissolving zinc acetate dehydrated into a solvent of
ethanol and diethanolamine (DEA) was later added. Meanwhile, for TiO2 films, titanium tetraisopropoxide (TTIP) was
dissolved into ethanol and an acetate acid was added. Afterwards all film samples were annealed at different temperatures in
the range of 400 – 600 oC for 60 minutes. For TiO2/ZnO bilayer thin films, the structural properties showed that after
annealing at 600 oC, the X-RD peak intensity was more pronounced compared to at 400 and 500 o
C. This indicated that the
amorphous phase of the films decreased after annealing at 600 o
C. Furthermore, the crystallite sizes of the films increase as
the annealing temperature increased to 600 oC, while the strain reduces at this temperature. In the case of (UV-Vis)
spectroscopy, it was seen that after annealing the transmittance value of the TiO2/ZnO bilayer increase. The band gap energy
of the films consists of low and high energy. The low energy which is around 3.30 eV refers to the transitions of valence-
conduction band in ZnO films and high energy was around 3.60 eV corresponding to the impurity transitions. In addition,
the refractive index (n), the extinction coefficient (k), and the real and imaginary part of dielectric constant were determined
from the transmittance and absorbance spectra results. Based on the SEM results indicate that there was no cluster in the
surface of TiO2/ZnO bilayer thin films.
Click on an image to view it in the image viewer
There are no comments for this item.