Gate all around MOSFET (Record no. 18182)
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| 000 -LEADER | |
|---|---|
| fixed length control field | a |
| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | OSt |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20221114121414.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 221114b xxu||||| |||| 00| 0 eng d |
| 040 ## - CATALOGING SOURCE | |
| Original cataloging agency | AIKTC-KRRC |
| Transcribing agency | AIKTC-KRRC |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| 9 (RLIN) | 10812 |
| Author | Harish Kumar |
| 245 ## - TITLE STATEMENT | |
| Title | Gate all around MOSFET |
| 250 ## - EDITION STATEMENT | |
| Volume, Issue number | Vol.3(1), Jan-Jun |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. | |
| Place of publication, distribution, etc. | Johannesburg |
| Name of publisher, distributor, etc. | AkiNik Publications |
| Year | 2022 |
| 300 ## - PHYSICAL DESCRIPTION | |
| Pagination | 18-23p. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc. | To keep performance levels high, we've scaled down single-gate MOSFETs to nanometres over the last three decades or so, but they're still plagued by issues such as interface coupling and channel orientation as well as leakage current and latch-up. In addition, additional parameters such as short channel effects (DIBL, GIDL), body effect, hot electron effect, punch through effect, surface scattering, impact ionisation, sub threshold swing, and volume inversion have shown results in terms of an increase in leakage current, a decrease in inversion charge, and a decrease in the drive current since the double-gate MOSFET came into existence. Comparing double- and single-gate MOSFET design, this article evaluated several performance parameters and channel material configurations for both configurations and also analysed different channel materials along with its structural orientation and the future uses of these devices. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| 9 (RLIN) | 4623 |
| Topical term or geographic name entry element | Electrical Engineering |
| 700 ## - ADDED ENTRY--PERSONAL NAME | |
| 9 (RLIN) | 19012 |
| Co-Author | Singh, Shamsher |
| 773 0# - HOST ITEM ENTRY | |
| Place, publisher, and date of publication | Johannesburg AkiNik Publications |
| Title | International journal of advances in electrical engineering |
| International Standard Serial Number | 2708-4574 |
| 856 ## - ELECTRONIC LOCATION AND ACCESS | |
| URL | https://www.electricaltechjournal.com/article/16/3-1-3-624.pdf |
| Link text | Click here |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Source of classification or shelving scheme | |
| Koha item type | Articles Abstract Database |
| Withdrawn status | Lost status | Source of classification or shelving scheme | Damaged status | Not for loan | Permanent Location | Current Location | Shelving location | Date acquired | Barcode | Date last seen | Price effective from | Koha item type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| School of Engineering & Technology | School of Engineering & Technology | Archieval Section | 2022-11-14 | 2022-2068 | 2022-11-14 | 2022-11-14 | Articles Abstract Database |