Gate all around MOSFET
By: Harish Kumar
.
Contributor(s): Singh, Shamsher.
Publisher: Johannesburg AkiNik Publications 2022Edition: Vol.3(1), Jan-Jun.Description: 18-23p.Subject(s): Electrical EngineeringOnline resources: Click here
In:
International journal of advances in electrical engineeringSummary: To keep performance levels high, we've scaled down single-gate MOSFETs to nanometres over the last
three decades or so, but they're still plagued by issues such as interface coupling and channel
orientation as well as leakage current and latch-up. In addition, additional parameters such as short
channel effects (DIBL, GIDL), body effect, hot electron effect, punch through effect, surface
scattering, impact ionisation, sub threshold swing, and volume inversion have shown results in terms of
an increase in leakage current, a decrease in inversion charge, and a decrease in the drive current since
the double-gate MOSFET came into existence. Comparing double- and single-gate MOSFET design,
this article evaluated several performance parameters and channel material configurations for both
configurations and also analysed different channel materials along with its structural orientation and the
future uses of these devices.
| Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|
Articles Abstract Database
|
School of Engineering & Technology Archieval Section | Not for loan | 2022-2068 |
To keep performance levels high, we've scaled down single-gate MOSFETs to nanometres over the last
three decades or so, but they're still plagued by issues such as interface coupling and channel
orientation as well as leakage current and latch-up. In addition, additional parameters such as short
channel effects (DIBL, GIDL), body effect, hot electron effect, punch through effect, surface
scattering, impact ionisation, sub threshold swing, and volume inversion have shown results in terms of
an increase in leakage current, a decrease in inversion charge, and a decrease in the drive current since
the double-gate MOSFET came into existence. Comparing double- and single-gate MOSFET design,
this article evaluated several performance parameters and channel material configurations for both
configurations and also analysed different channel materials along with its structural orientation and the
future uses of these devices.
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