Review on the Designs and Characteristics of High-Electron Mobility Transistors
By: Mukhopadhyay, Subhadeep
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Contributor(s): Kalita, Sandip.
Publisher: New Delhi Journals Pub 2018Edition: Vol.4(1), Jan-June.Description: 20-41p.Subject(s): EXTC EngineeringOnline resources: Click here
In:
International journal of microwave engineering and technologySummary: Many authors have presented different physics based analytical models to manifest the characteristics of high electron mobility transistors (HEMTs). The designs of HEMTs are highly important to achieve sufficient efficiency. Conduction band engineering in HEMTs is the reason to generate a two-dimensional electron gas (2DEG) at the heterointerface. Microelectromechanical systems (MEMS) and microwave engineering are the relevant areas for the applications of HEMTs.
| Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
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School of Engineering & Technology Archieval Section | Not for loan | 2020471 |
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Many authors have presented different physics based analytical models to manifest the characteristics of high electron mobility transistors (HEMTs). The designs of HEMTs are highly important to achieve sufficient efficiency. Conduction band engineering in HEMTs is the reason to generate a two-dimensional electron gas (2DEG) at the heterointerface. Microelectromechanical systems (MEMS) and microwave engineering are the relevant areas for the applications of HEMTs.
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