Review on the Designs and Characteristics of High-Electron Mobility Transistors
By: Mukhopadhyay, Subhadeep.
Contributor(s): Kalita, Sandip.
Publisher: New Delhi Journals Pub 2018Edition: Vol.4(1), Jan-June.Description: 20-41p.Subject(s): EXTC EngineeringOnline resources: Click here In: International journal of microwave engineering and technologySummary: Many authors have presented different physics based analytical models to manifest the characteristics of high electron mobility transistors (HEMTs). The designs of HEMTs are highly important to achieve sufficient efficiency. Conduction band engineering in HEMTs is the reason to generate a two-dimensional electron gas (2DEG) at the heterointerface. Microelectromechanical systems (MEMS) and microwave engineering are the relevant areas for the applications of HEMTs.Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
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Articles Abstract Database | School of Engineering & Technology Archieval Section | Not for loan | 2020471 |
Total holds: 0
Many authors have presented different physics based analytical models to manifest the characteristics of high electron mobility transistors (HEMTs). The designs of HEMTs are highly important to achieve sufficient efficiency. Conduction band engineering in HEMTs is the reason to generate a two-dimensional electron gas (2DEG) at the heterointerface. Microelectromechanical systems (MEMS) and microwave engineering are the relevant areas for the applications of HEMTs.
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