Effect of RF power on physical and electrical properties of Al-doped ZnO hin film
By: Rana, Vijay S
.
Contributor(s): Purohit, Laxmi P.
Publisher: New Delhi CSIR 2022Edition: Vol.60(3), Mar.Description: 246-253p.Subject(s): Humanities and Applied SciencesOnline resources: Click here
In:
Indian journal of pure & applied physics (IJPAP)Summary: We deposited Al-doped zinc oxide (AZO) thin films on PTFE flexible substrate by RF sputtering with respect to the
power in the range 125-155 W. XRD-pattern showed the preferred c-axis (002) orientation regardless the rf-power, which
confirmed the hexagonal wurtzite crystal structure. The dislocation density (δ), and strain (ε) of AZO thin films were
determined to be 1.861015-0.7410 15 m-2, and 85.6×10 -3-54.0×10 -3, respectively. The AZO film deposited at 135 W showed
the smooth and uniform microstructure, which is the highest intensity of XRD-pattern due to smaller grain size. The
refractive index (n) increased from 2.24 to 2.34, while the bandgap (Eg), and urbach tail (Eu) decreased from 3.66 to 3.31 eV
and 0.33 to 0.22 eV as the RF power increased from 125 to 155 W. The sheet resistance and figure of merit (FOM) of AZO
thin films were observed to be the lowest 53.36 /cm and 5.17 10 -10 -1 for the sample 135 W.
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School of Engineering & Technology Archieval Section | Not for loan | 2022-1895 |
We deposited Al-doped zinc oxide (AZO) thin films on PTFE flexible substrate by RF sputtering with respect to the
power in the range 125-155 W. XRD-pattern showed the preferred c-axis (002) orientation regardless the rf-power, which
confirmed the hexagonal wurtzite crystal structure. The dislocation density (δ), and strain (ε) of AZO thin films were
determined to be 1.861015-0.7410 15 m-2, and 85.6×10 -3-54.0×10 -3, respectively. The AZO film deposited at 135 W showed
the smooth and uniform microstructure, which is the highest intensity of XRD-pattern due to smaller grain size. The
refractive index (n) increased from 2.24 to 2.34, while the bandgap (Eg), and urbach tail (Eu) decreased from 3.66 to 3.31 eV
and 0.33 to 0.22 eV as the RF power increased from 125 to 155 W. The sheet resistance and figure of merit (FOM) of AZO
thin films were observed to be the lowest 53.36 /cm and 5.17 10 -10 -1 for the sample 135 W.
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