Improvement of drive currents of FinFET using strained si technology
By: Das, Supratim Subhra
.
Publisher: New York Springer 2022Edition: Vol.103(1), Feb.Description: 101-105p.Subject(s): Humanities and Applied SciencesOnline resources: Click here
In:
Journal of the institution of engineers (India): Series BSummary: In this paper, an analysis of Fin thickness variation on device performance of SiGe channel FinFET on SOI technology is reported. For a double gate n-channel FinFET with a gate length of 32 nm and Fin height of 60 nm, thickness of fin is varied from 6 to 14 nm. The transfer characteristics at different fin thickness are observed and compared by extracting electrical parameters like threshold voltage, transconductance, etc. A comparative study was also made between Si channel and SiGe channel FinFET characteristics. In 32 nm technology node, an improvement in drive current is observed with the increase of fin width in SiGe channel FinFET, but typical behavior is observed and analyzed in case of Si channel FinFET. All simulations have been performed using Sentaurus (TCAD device simulator) using suitable current model.
| Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|
Articles Abstract Database
|
School of Engineering & Technology Archieval Section | Not for loan | 2022-1576 |
In this paper, an analysis of Fin thickness variation on device performance of SiGe channel FinFET on SOI technology is reported. For a double gate n-channel FinFET with a gate length of 32 nm and Fin height of 60 nm, thickness of fin is varied from 6 to 14 nm. The transfer characteristics at different fin thickness are observed and compared by extracting electrical parameters like threshold voltage, transconductance, etc. A comparative study was also made between Si channel and SiGe channel FinFET characteristics. In 32 nm technology node, an improvement in drive current is observed with the increase of fin width in SiGe channel FinFET, but typical behavior is observed and analyzed in case of Si channel FinFET. All simulations have been performed using Sentaurus (TCAD device simulator) using suitable current model.
Click on an image to view it in the image viewer
There are no comments for this item.